Capacitor and register of semiconductor device, memory system including the semiconductor device, and method of manufacturing the semiconductor device
AssigneeSK hynix Inc.
InventorsSun Mi Park, Sang Hyun Oh, Sang Bum Lee
Life of this patent
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Abstract
A capacitor of a semiconductor device includes a capacitor structure configured to include electrode layers and dielectric layers alternately stacked, edge regions each stepwise patterned, and a central region disposed between the edge regions, sacrificial layers disposed within the respective electrode layers in the edge regions of the capacitor structure, and support plugs formed in the central region of the capacitor structure and configured to penetrate the electrode layers and the dielectric layers.
Claims10
A method of forming a capacitor of a semiconductor device;
- the method comprising:
- forming a capacitor structure on which edge regions each stepwise patterned and a central region between the edge regions are defined, and configured to comprise sacrificial layers and dielectric layers alternately stacked and support plugs placed in the central region;
- forming first slits, each placed between the support plugs of the central region, and one or more second slits placed in the edge regions by etching the sacrificial layers and the dielectric layers;
- etching the sacrificial layers exposed in the first slits and the second slits so that the sacrificial layers of the central region are fully removed and the sacrificial layers of the edge regions remain partially;
- and
- forming electrode layers for the capacitor by filling the etched regions of the sacrificial layers with a conductive layer.
A method of forming a register of a semiconductor device;
- the method comprising:
- forming a register structure configured to comprise sacrificial layers and interlayer insulating layers alternately stacked, support plugs placed in a central region, and edge regions each stepwise patterned;
- forming first slits, each placed between the support plugs of the central region, and one or more second slits placed in the edge regions by etching the sacrificial layers and the interlayer insulating layers;
- etching the sacrificial layers exposed in the first slits and the second slits so that the sacrificial layers of the central region are fully removed and the sacrificial layers of the edge regions remain partially;
- and
- forming register layers by filling the etched regions of the sacrificial layers with a conductive layer.
Dependencies are inferred from the claim text.