Electronic device including shallow trench isolation (STI) regions with bottom nitride liner and upper oxide liner and related methods
AssigneeSTMicroelectronics S.r.l.
InventorsQing Liu, Nicolas Loubet, Prasanna Khare
Life of this patent
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Abstract
An electronic device may include a substrate, a buried oxide (BOX) layer overlying the substrate, at least one semiconductor device overlying the BOX layer, and at least one STI region in the substrate and adjacent the at least one semiconductor device. The at least one STI region defines a sidewall surface with the substrate and may include a nitride layer lining a bottom portion of the sidewall surface, an oxide layer lining a top portion of the sidewall surface above the bottom portion, and an insulating material within the nitride and oxide layers.
Claims23
An electronic device comprising:
- a substrate;
- a buried oxide (BOX) layer overlying said substrate;
- at least one semiconductor device overlying said BOX layer;
- and
- at least one shallow trench isolation (STI) region in the substrate and adjacent the at least one semiconductor device, said at least one STI region defining a sidewall surface with the substrate and comprising
- a nitride layer lining a bottom portion of the sidewall surface,
- an oxide layer lining a top portion of the sidewall surface above the bottom portion, and
- an insulating material overlying the nitride and oxide layers and extending vertically above the oxide layer.
An electronic device comprising:
- a substrate;
- a buried oxide (BOX) layer overlying said substrate;
- at least one semiconductor device overlying said BOX layer;
- and
- at least one shallow trench isolation (STI) region in the substrate and adjacent the at least one semiconductor device, said at least one STI region defining a sidewall surface with the substrate and comprising
- a silicon nitride (SiN) layer lining a bottom portion of the sidewall surface,
- a hafnium oxide (HfO2) layer lining a top portion of the sidewall surface above the bottom portion, and
- an insulating material overlying the SiN and HfO2 layers and extending vertically above the HfO2 layer.
A method for making an electronic device comprising:
- forming at least one shallow trench isolation (STI) region in a substrate having a buried oxide (BOX) layer overlying the substrate by at least
- forming a trench in the substrate defining a sidewall surface with the substrate,
- lining a bottom portion of the sidewall surface with a nitride layer,
- lining a top portion of the sidewall surface above the bottom portion with an oxide layer, and
- depositing an insulating material overlying the nitride and oxide layers and extending vertically above the oxide layer;
- and
- forming at least one semiconductor device overlying the BOX layer adjacent the at least one STI region.
Dependencies are inferred from the claim text.