High performance surface illuminating GeSi photodiodes
AssigneeSifotonics Technologies Co., Ltd.
InventorsMengyuan Huang, Tuo Shi, Pengfei Cai, Dong Pan
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Abstract
A GeSi avalanche photodiode (APD includes an anti-reflection structure, a Ge absorption region, and a resonance cavity enhanced (RCE) reflector. The anti-reflection structure includes one or more dielectric layers and a top contact layer which is heavily doped with dopants of a first polarity. The RCE reflector includes: an intrinsic or lightly doped Si multiplication layer, a Si contact layer which is heavily doped with dopants of a second polarity opposite the first polarity, a Si cavity length compensation layer, a buried oxide (BOX) layer, and a Si substrate.
Claims20
A GeSi avalanche photodiode (APD), comprising:
- an anti-reflection structure, comprising:
- one or more dielectric layers, and
- a top contact layer on which the one or more dielectric layers are disposed, the top contact layer being heavily doped with dopants of a first polarity;
- a germanium (Ge) absorption region on which the anti-reflection structure is disposed;
- and
- a resonance cavity enhanced (RCE) reflector on which the Ge absorption region is disposed, the RCE reflector comprising:
- an intrinsic or lightly doped silicon (Si) multiplication layer,
- a Si contact layer on which said doped Si multiplication layer is disposed, the Si contact layer being heavily doped with dopants of a second polarity opposite the first polarity,
- a Si cavity length compensation layer on which the Si contact layer is disposed,
- a buried oxide (BOX) layer on which the Si cavity length compensation layer is disposed, and
- a Si substrate on which the BOX layer is disposed.
A GeSi photodiode (PD), comprising:
- an anti-reflection structure, comprising:
- one or more dielectric layers, and
- a top contact layer on which the one or more dielectric layers are disposed, the top contact layer being heavily doped with dopants of a first polarity;
- a germanium (Ge) absorption region on which the anti-reflection structure is disposed;
- and
- a resonance cavity enhanced (RCE) reflector on which the Ge absorption region is disposed, the RCE reflector comprising:
- a Si contact layer heavily doped with dopants of a second polarity opposite the first polarity,
- a Si cavity length compensation layer on which the Si contact layer is disposed,
- a buried oxide (BOX) layer on which the Si cavity length compensation layer is disposed, and
- a Si substrate on which the BOX layer is disposed.
Dependencies are inferred from the claim text.