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US 9,000,545 B2Granted
Magnetic random access memory
AssigneeKabushiki Kaisha Toshiba
InventorTakeshi Kajiyama
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Abstract
A magnetic random access memory includes a semiconductor substrate, an MTJ element formed from a perpendicular magnetization film and arranged above the semiconductor substrate, and a stress film including at least one of a tensile stress film arranged on an upper side of the MTJ element to apply a stress in a tensile direction with respect to the semiconductor substrate and a compressive stress film arranged on a lower side of the MTJ element to apply a stress in a compressive direction with respect to the semiconductor substrate.
Claims18
A magnetic random access memory comprising:
- a semiconductor substrate;
- an MTJ element formed from a perpendicular magnetization film and arranged above the semiconductor substrate;
- and
- a stress film including a tensile stress film arranged on at least one of an upper side of the MTJ element and a lower side of the MTJ element to apply a stress in a tensile direction with respect to the semiconductor substrate.
1 more element
Dependencies are inferred from the claim text.