Photoelectric conversion device and electronic apparatus
AssigneeSeiko Epson Corporation
InventorsYasunori Hattori, Tomotaka Matsumoto, Tsukasa Eguchi
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Abstract
A photoelectric conversion device includes circuit portions disposed on a substrate, a first electrode electrically connected to one of the circuit portions, an optically transparent second electrode opposing the first electrode, and a photoelectric conversion portion disposed between the first electrode and the second electrode. The photoelectric conversion portion has a multilayer structure including a light absorption layer made of a p-type compound semiconductor film having a chalcopyrite structure, an amorphous oxide semiconductor layer, and a window layer made of an n-type semiconductor film.
Claims9
An electronic apparatus comprising a photoelectric conversion device, the photoelectric conversion device comprising:
- a first electrode;
- an optically transparent second electrode opposing the first electrode;
- and
- a photoelectric conversion portion, at least a portion of which is disposed between the first electrode and the second electrode, the photoelectric conversion portion including a light absorption layer made of a p-type chalcopyrite compound semiconductor film, a window layer made of an n-type semiconductor film, and an amorphous oxide semiconductor layer between the light absorption layer and the window layer,
- wherein the amorphous oxide semiconductor layer has a thickness of 50 to 500 nm,
- wherein the amorphous oxide semiconductor layer contains In, Ga and Zn,
- and wherein the electronic apparatus further comprises:
- an object receiver having a groove configured to receive a finger;
- an image pickup portion including the photoelectric conversion device;
- a micro lens array between the object receiver and the image pickup portion;
- and
- an optical compensation plate between the object receiver and the micro lens array, the optical compensation plate configured to compensate for unevenness in brightness of light from light sources.
An electronic apparatus comprising a photoelectric conversion device, the photoelectric conversion device comprising:
- a first electrode;
- an optically transparent second electrode opposing the first electrode;
- and
- a photoelectric conversion portion between the first electrode and the second electrode, the photoelectric conversion portion including a p-type crystalline compound semiconductor film, an n-type semiconductor film, and an amorphous oxide semiconductor layer between the p-type crystalline compound semiconductor film and the n-type semiconductor film,
- wherein the amorphous oxide semiconductor layer has a thickness of 50 to 500 nm, and
- wherein the amorphous oxide semiconductor layer contains In, Ga and Zn,
- and wherein the electronic apparatus further comprises:
- an object receiver having a groove configured to receive a finger;
- an image pickup portion including the photoelectric conversion device;
- a micro lens array between the object receiver and the image pickup portion;
- and
- an optical compensation plate between the object receiver and the micro lens array, the optical compensation plate configured to compensate for unevenness in brightness of light from light sources.
Dependencies are inferred from the claim text.