Semiconductor device and a method for manufacturing a semiconductor device
AssigneeRenesas Electronics Corporation
InventorsHiroshi Sunamura, Naoya Inoue, Kishou Kaneko
Life of this patent
Estimating the term…
Abstract
The performances of semiconductor elements disposed in a multilayer wiring layer are improved. A semiconductor device includes: a first wire disposed in a first wiring layer; a second wire disposed in a second wiring layer stacked over the first wiring layer; a gate electrode arranged between the first wire and the second wire in the direction of stacking of the first wiring layer and the second wiring layer, and not coupled with the first wire and the second wire; a gate insulation film disposed over the side surface of the gate electrode; and a semiconductor layer disposed over the side surface of the gate electrode via the gate insulation film, and coupled with the first wire and the second wire.
Claims18
A semiconductor device, comprising:
- a first wire disposed in a first wiring layer,
- a second wire disposed in a second wiring layer stacked over the first wiring layer,
- a gate electrode arranged between the first wire and the second wire in a direction of stacking of the first wiring layer and the second wiring layer, and not coupled with the first wire and the second wire,
- a gate insulation film disposed over a side surface of the gate electrode,
- a semiconductor layer disposed over the side surface of the gate electrode via the gate insulation film, and coupled with the first wire and the second wire,
- a via disposed under the second wire, and coupled with the second wire,
- a second insulation film disposed between the gate electrode and the first wire, and
- a third insulation film disposed between the gate electrode and the via,
- wherein a film thickness of the second insulation film is larger than a film thickness of the third insulation film.
Dependencies are inferred from the claim text.