Semiconductor device with equipotential ring contact at curved portion of equipotential ring electrode and method of manufacturing the same

A semiconductor device comprising:

• a semiconductor body that has a polygonal shape and includes a first are and second area, the first area being an active area including transistor elements formed therein;
• an insulating film that is formed over the semiconductor body;
• an Equipotential Ring (EQR) electrode that is embedded in the insulating film around the active area, and includes curved portions at corners of the polygonal shape;
• a source contact that is formed within the insulating film in the active area;
• and
• EQR contacts that are formed within the insulating film, the EQR contacts each abutting only a respective curved portion of the EQR electrode, the EQR contacts each abutting the second area of the semiconductor body outside the curved portions,
• wherein upper surfaces of the EQR contacts are lower in level than an upper surface of the insulating film and an upper surface of the source contact.