Semiconductor device and semiconductor device manufacturing method

A semiconductor device comprising:

• a semiconductor substrate;
• a first transistor, that includes a first source/drain region and a first gate electrode, formed on the semiconductor substrate;
• a second transistor, that includes a second source/drain region and a second gate electrode, formed on the semiconductor substrate;
• an insulating film that covers the first and second source/drain regions and the first and second gate electrodes;
• and
• a first contact plug formed in the insulating film and connected to the first source/drain region and the second gate electrode,
• wherein:
• the first contact plug includes a first column section, a second column section and a first flange section,
• the first column section extends from the first flange section to the first source/drain region and is in contact with the first source/drain region,
• the second column section extends from the first flange section to the second gate electrode and is in contact with the second gate electrode,
• the first flange section juts out from an upper portion of the first column section and an upper portion of the second column section in a plan view, and an upper surface of the first flange section is planarized,
• the first column section, the second column section and the flange section include a same material, and
• the first flange section is connected to the first column section and the second column section.