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US 9,000,522 B2Granted
FinFET with dielectric isolation by silicon-on-nothing and method of fabrication
AssigneeInternational Business Machines Corporation
InventorsKangguo Cheng, Balasubramanian S. Haran, Shom Ponoth, Theodorus Eduardus Standaert, Tenko Yamashita
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Abstract
An improved finFET and method of fabrication using a silicon-on-nothing process flow is disclosed. Nitride spacers protect the fin sides during formation of cavities underneath the fins for the silicon-on-nothing (SON) process. A flowable oxide fills the cavities to form an insulating dielectric layer under the fins.
Claims9
A semiconductor structure comprising:
- a semiconductor substrate;
- an insulator layer disposed over the semiconductor substrate;
- a plurality of semiconductor fins disposed on the insulator layer;
- and
- a plurality of embedded spacers disposed in the insulator layer adjacent to each fin;
- and
- wherein the insulator layer has a first thickness in an under-fin region located directly below each fin of the plurality of semiconductor fins and a second thickness in an inter-fin region located between each fin of the plurality of semiconductor fins, wherein the first thickness is greater than the second thickness;
- and
- wherein the insulator layer in the under-fin region extends above the insulator layer in the inter-fin region;
- and
- wherein the insulator layer in the under-fin region extends below the insulator layer in the inter-fin region;
- and
- wherein the plurality of fins are merged by an epitaxial region, and wherein the epitaxial region covers the plurality of embedded spacers.
10 more elements
Dependencies are inferred from the claim text.