Method for manufacturing a semiconductor device and semiconductor device with surrounding gate transistor

A semiconductor device, comprising:

• a fin-shaped semiconductor layer formed on a semiconductor substrate, said fin-shaped semiconductor layer extending in a first direction and having a given width;
• a first insulating film formed around said fin-shaped semiconductor layer;
• a pillar-shaped semiconductor layer formed on said fin-shaped semiconductor layer and having a width equal to the given width of said fin-shaped semiconductor layer;
• a gate insulating film formed around said pillar-shaped semiconductor layer;
• a gate electrode formed around said gate insulating film;
• a gate line connected to said gate electrode, extending in a second direction perpendicular to said first direction of said fin-shaped semiconductor layer, and formed, as a sidewall-shape, on a side wall of a dummy gate formed of a polysilicon;
• a first diffusion layer formed in an upper portion of said pillar-shaped semiconductor layer;
• and
• a second diffusion layer formed over an upper portion of said fin-shaped semiconductor layer and a lower portion of said pillar-shaped semiconductor layer.