Three dimensional pipe gate nonvolatile memory device
AssigneeHynix Semiconductor Inc.
InventorsKi-Hong Lee, Kwon Hong, Dae-Gyu Shin
Life of this patent
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Abstract
A nonvolatile memory device includes a pipe gate having a pipe channel hole; a plurality of interlayer insulation layers and a plurality of gate electrodes alternately stacked over the pipe gate; a pair of columnar cell channels passing through the interlayer insulation layers and the gate electrodes and coupling a pipe channel formed in the pile channel hole; a first blocking layer and a charge trapping and charge storage layer formed on sidewalls of the columnar cell channels; and a second blocking layer formed between the first blocking layer and the plurality of gate electrodes.
Claims12
A nonvolatile memory device comprising:
- a pipe gate having a pipe channel hole;
- a plurality of interlayer insulation layers and a plurality of gate electrodes alternately stacked over the pipe gate;
- a pair of columnar cell channels passing through the interlayer insulation layers and the gate electrodes and coupling a pipe channel formed in the pile channel hole;
- a first blocking layer and a charge trapping and charge storage layer and formed on sidewalls of the columnar cell channels;
- a second blocking layer formed between the first blocking layer and the plurality of gate electrodes:
- and
- a third blocking layer formed between the plurality of gate electrode and the plurality of interlayer insulation layers.
Dependencies are inferred from the claim text.