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US 9,000,508 B2Granted
Nonvolatile memory devices having vertically integrated nonvolatile memory cell sub-strings therein
AssigneeSamsung Electronics Co., Ltd.
InventorsChanghyun Lee, Sunhil Shim, Jaehoon Jang, Sunghoi Hur, Hansoo Kim, Kihyun Kim
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Abstract
Nonvolatile memory devices according to embodiments of the invention include highly integrated vertical stacks of nonvolatile memory cells. These vertical stacks of memory cells can utilize dummy memory cells to compensate for process artifacts that would otherwise yield relatively poor functioning memory cell strings when relatively large numbers of memory cells are stacked vertically on a semiconductor substrate using a plurality of vertical sub-strings electrically connected in series.
Claims22
A nonvolatile memory device, comprising:
- a first stack of layers on a substrate, said first stack of layers comprising first interlayer dielectric layers and first word lines arranged vertically in an alternating sequence;
- a first active region penetrating the first stack of layers;
- a second stack of layers on the first stack of layers, said second stack of layers comprising second interlayer dielectric layers and second word lines arranged vertically in an alternating sequence;
- a second active region penetrating the second stack of layers, contacting the first active region;
- and
- a dummy word line disposed adjacent to a contact position in which the first active region and the second active region contact each other.
3 more elements
Dependencies are inferred from the claim text.