# US 9,000,500 B2 · Image sensor with doped transfer gate

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- Number: US 9,000,500 B2
- Document ID: US9000500B2
- Status: Granted
- Kind: B2
- Application number: 12/942,517
- Filed: 2010-11-09
- Published: 2011-06-30
- Granted: 2015-04-07
- Earliest claimed: 2009-12-30
- Assignees: OmniVision Technologies, Inc.
- Applicants: Hung Q. Doan; Eric G. Stevens
- Inventors: Hung Q. Doan; Eric G. Stevens
- Web page: https://patentgrep.com/patent/US9000500B2

## CPC

- H10F 39/014: {of CMOS image sensors}
- H10F 39/802: {Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes}
- H10F 39/803: {Pixels having integrated switching, control, storage or amplification elements}
- H10F 39/8037: {the integrated elements comprising a transistor}
- H10F 39/80373: {characterised by the gate of the transistor}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

An image sensor includes an array of pixels, with at least one pixel including a photodetector formed in a substrate layer and a transfer gate disposed adjacent to the photodetector. The substrate layer further includes multiple charge-to-voltage conversion regions. A single photodetector can transfer collected charge to a single charge-to-voltage conversion region, or alternatively multiple photodetectors can transfer collected charge to a common charge-to-voltage conversion region shared by the photodetectors. An implant region formed when dopants are implanted into the substrate layer to form source/drain implant regions is disposed in only a portion of each transfer gate while each charge-to-voltage conversion region is substantially devoid of the implant region.

## Claims

### Claim 1

An image sensor comprising:
at least one photodetector formed in a substrate layer;
a well including a charge-to-voltage conversion region formed in the substrate layer;
a transfer gate disposed between each photodetector and charge-to-voltage conversion region;
a first implant region including a first dopant disposed over a second implant region including a second dopant, wherein the first and second implant regions extend from an edge of the transfer gate overlapping the charge-to-voltage conversion region and are disposed in only a portion of each transfer gate, wherein the charge-to-voltage conversion region includes the first dopant of the first implant region which extends from below the edge of the transfer gate away from the transfer gate and is substantially devoid of the second dopant of the second implant region, and wherein the first dopant and the second dopant have a conductivity type that is opposite a conductivity type of the well.

### Claim 2 (depends on 1)

The image sensor as in claim 1, wherein the image sensor includes two photodetectors that share the charge-to-voltage conversion region.

### Claim 3 (depends on 2)

The image sensor of claim 2, further comprising a masking conformal dielectric layer disposed over a surface of the substrate layer between the transfer gates associated with the shared charge-to-voltage conversion region and filling at least a bottom portion of a space between the two transfer gates.

### Claim 4 (depends on 3)

The image sensor as in claim 3, further comprising a conformal dielectric layer covering an inside edge of each transfer gate and disposed between the masking conformal dielectric layer and the surface of the substrate layer.

### Claim 5 (depends on 1)

The image sensor of claim 1, wherein the first and second implant regions laterally extend within the transfer gate less than the full width of a top surface of the transfer gate.

### Claim 6 (depends on 1)

The image sensor of claim 1, wherein the first dopant of the first implant region included in the charge-to-voltage region is a lightly doped drain formed in a well.

### Claim 7

An image sensor comprising:
a plurality of pixels each pixel including a photodetector and a transfer gate adjacent to the photodetector, wherein the pixels are arranged such that two adjacent pixels share a common charge-to-voltage conversion region, wherein the charge-to-voltage conversion region is included in a well having a conductivity type; and
a first implant region including a first dopant disposed over a second implant region including a second dopant, wherein the first and second implant regions extend from an edge of the transfer gate overlapping the charge-to-voltage conversion region and are disposed in only a portion of each transfer gate, wherein each common charge-to-voltage conversion region includes the first dopant of the first implant region which extends from below the edge of the transfer gate away from the transfer gate and is substantially devoid of the second dopant of the second implant region, and wherein the first dopant and the second dopant have a conductivity type that is opposite the conductivity type of the well.

### Claim 8 (depends on 7)

The image sensor as in claim 7, further comprising a masking conformal dielectric layer disposed over a surface of the substrate layer between the transfer gates associated with the common charge-to-voltage conversion region, and wherein the masking conformal dielectric layer fills at least a bottom portion of a space between the two transfer gates.

### Claim 9 (depends on 8)

The image sensor as in claim 8, further comprising a conformal dielectric layer covering an inside edge of each transfer gate and disposed between the masking conformal dielectric layer and the surface of the substrate layer.

### Claim 10 (depends on 7)

The image sensor of claim 7, wherein the first and second implant regions laterally extend within the transfer gate less than the full width of a top surface of the transfer gate.