Back to results
US 9,000,499 B2Granted
Gate-all-around carbon nanotube transistor with selectively doped spacers
AssigneeInternational Business Machines Corporation
InventorsAaron D. Franklin, Siyuranga O. Koswatta, Joshua T. Smith
Life of this patent
Estimating the term…
Abstract
A method of fabricating a semiconducting device is disclosed. A carbon nanotube is formed on a substrate. A portion of the substrate is removed to form a recess below a section of the carbon nanotube. A doped material is applied in the recess to fabricate the semiconducting device. The recess may be between one or more contacts formed on the substrate separated by a gap.
Claims20
A semiconducting device, comprising:
- a carbon nanotube on a substrate;
- a recess formed in a portion of the substrate below a section of the carbon nanotube;
- and
- a doped material on exposed surfaces of the recess except for a surface of the section of carbon nanotube.
1 more element
A transistor, comprising:
- a carbon nanotube material on a substrate;
- one or more contacts formed on the substrate to configured to define a gap between the one or more contacts;
- a removed portion of the substrate in the gap;
- and
- a doped material on exposed surfaces of the removed portion in the gap except for a surface of the carbon nanotube at the recess.
2 more elements
A self-aligned carbon nanotube transistor, comprising:
- a carbon nanotube on a substrate;
- a source contact on the substrate over the carbon nanotube;
- a drain contact on the substrate over the carbon nanotube, wherein the drain contact is separated from the source contact by a gap;
- a recess in the gap between the source contact and the drain contact formed by removing a portion of the substrate in the gap;
- and
- a doped material in the gap, wherein a surface of the carbon nanotube in the gap is not lined with the doped material.
3 more elements
Dependencies are inferred from the claim text.