FinFET with multiple concentration percentages

An apparatus of a semiconductor, the apparatus comprising:

• a substrate supporting a stack;
• the substrate comprising a first material;
• the stack providing a fin, the stack comprising:
• a strain induced in the stack via the substrate;
• the first material and a second material;
• and
• the second material including a plurality of concentrations with respect to the first material;
• the fin providing a source and a drain of a field effect transistor;
• wherein the fin is formed from the stack by etching away one or more portions of the stack;
• wherein a relaxation in the strain of the stack of the fin occurs via the etching;
• and
• wherein the plurality of concentrations compensate for the relaxation.

A method of a semiconductor apparatus, the method comprising:

• supporting, via a substrate, a stack,
• the substrate comprising a first material;
• providing, via the stack, a fin,
• a strain induced in the stack via the substrate, and
• the stack comprising the first material and a second material;
• and
• providing, via the fin, a source and a drain of a field effect transistor,
• the fin formed from the stack by etching away one or more portions of the stack,
• a relaxation in the strain of the stack of the fin via the etching,
• the stack of the fin comprising a plurality of concentrations of the second material with respect to the first material, and
• the plurality of concentrations to compensate for the relaxation.

A fin field effect transistor (FinFET) structure comprising:

• a substrate made of a first material;
• and
• a fin formed overlying the substrate,
• the fin including a second material
• having a non-uniform concentration, from a top layer the fin to a bottom layer of the fin, of the second material with respect to the first material;
• and
• the fin providing a channel of the FinFET.

A fin field effect transistor (FinFET) structure comprising:

• a substrate made of a first material;
• and
• a fin formed the substrate including a second material a non-uniform concentration, from a top layer of the fin to a bottom layer of the fin, of the second material with respect to the first material, the fin providing a channel of a FinFET,
• wherein the fin is formed from a stack by etching away one or more portions of the stack;
• wherein a relaxation in a strain of the stack of the fin is created via the etching;
• and
• wherein the non-uniform concentration compensates for the relaxation.