Trench MOSFET having an independent coupled element in a trench
AssigneeRenesas Electronics Corporation
InventorsTetsuo Sato, Tomoaki Uno, Hirokazu Kato, Nobuyoshi Matsuura
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Abstract
A trench MOSFET is disclosed that includes a semiconductor substrate having a vertically oriented trench containing a gate. The trench MOSFET further includes a source, a drain, and a conductive element. The conductive element, like the gate is contained in the trench, and extends between the gate and a bottom of the trench. The conductive element is electrically isolated from the source, the gate, and the drain. When employed in a device such as a DC-DC converter, the trench MOSFET may reduce power losses and electrical and electromagnetic noise.
Claims16
An apparatus comprising:
- a first transistor comprising:
- a first trench formed in a first semiconductor substrate;
- a first source;
- a first gate in the first trench;
- a first conductive element in the first trench;
- wherein the first conductive element extends between the first gate and a bottom of the first trench;
- wherein the first conductive element is isolated from the first source and the first gate by an insulating material.
Dependencies are inferred from the claim text.