Semiconductor apparatus having penetration electrode and method for manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorDaisuke Yamashita
Life of this patent
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Abstract
According to one embodiment, in a semiconductor apparatus, a semiconductor substrate has a first surface and a second surface opposite to the first surface. A semiconductor device is formed in a rectangular region enclosed by a plurality of dicing lines of the semiconductor substrate. The semiconductor device includes a first electrode provided on the first surface and a second electrode provided on the second surface so as to pass a current between the first electrode and the second electrode. A penetration electrode is formed in a region not enclosed by the dicing lines of the semiconductor substrate. One end of the penetration electrode extends on the first surface. The other end of the penetration electrode is electrically connected to the second electrode.
Claims12
A semiconductor apparatus, comprising:
- a semiconductor substrate having a first surface and a second surface opposite to the first surface;
- a semiconductor device in a first region of the semiconductor substrate, the first region being enclosed by a plurality of dicing lines on the semiconductor substrate, the semiconductor device including a first electrode on the first surface and a second electrode on the second surface;
- and
- a penetration electrode formed in a second region of the semiconductor substrate outside the first region and at an outer periphery of the semiconductor substrate, a first end of the penetration electrode being exposed at the first surface and a second end of the penetration electrode being electrically connected to the second electrode on the second surface, the penetration electrode having a plurality of segments disposed in a ring shape along the outer periphery of the semiconductor substrate.
A semiconductor apparatus, comprising:
- a semiconductor substrate having a first surface and a second surface opposite to the first surface;
- a semiconductor device in a first region of the semiconductor substrate, the first region enclosed by a plurality of dicing lines on the semiconductor substrate, the semiconductor device including a first electrode on the first surface and a second electrode on the second surface;
- a penetration electrode in a second region of the semiconductor substrate outside the first region and along an outer periphery of the semiconductor substrate, a first end of the penetration electrode being exposed at the first surface and a second end of the penetration electrode being electrically connected to the second electrode on the second surface, the penetration electrode having a plurality of segments disposed in a ring shape along the outer periphery of the semiconductor substrate;
- and
- a wiring formed on the first surface of the semiconductor substrate, the wiring electrically connecting adjacent segments of the penetration electrode to each other.
Dependencies are inferred from the claim text.