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US 9,000,493 B2Granted
Solid-state imaging device, method for producing same, and camera
AssigneeSony Corporation
InventorsTetsuji Yamaguchi, Yasushi Maruyama, Takashi Ando, Susumu Hiyama, Yuko Ohgishi
Life of this patent
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Abstract
A solid-state imaging device includes a substrate with oppositely facing first surface and second surfaces, light being received through the second surface; a wiring layer on the first surface; a photodetector in the substrate; a charge accumulation region between the second surface and the photodetector; and an insulating layer over the second surface, the insulating layer have a region that is at least partially crystallized.
Claims30
A solid-state imaging device comprising:
- an imaging region and a peripheral circuit region, the peripheral circuit region including at least one of a vertical selection circuit, a sample-and-hold correlated double sampling circuit, a horizontal selection circuit, a timing generator, an automatic gain control circuit, an A/D converter circuit and a digital amplifier;
- a substrate having first and second sides, the second side having a light-receiving surface, the first side having an oppositely facing surface;
- a photodetector in the substrate at the imaging region;
- a silicon oxide film on the light-receiving surface and extending over the imaging region and the peripheral circuit region;
- a first insulating film having an at least partially crystallized region on the silicon oxide film and extending over the imaging region and the peripheral circuit region, the first insulating film being composed of an oxide containing an element selected from the group consisting of hafnium, aluminum, tantalum, titanium, yttrium, and lanthanoids;
- a light-shielding film extending over the peripheral circuit region and a portion of the imaging region;
- a plurality of on-chip micro lenses over the first insulating film at the second side and disposed at least over the imaging region;
- a wiring layer over the oppositely facing surface, the wiring layer including a transfer gate of a transfer transistor;
- and
- a charge accumulation region in the substrate at the light-receiving surface, the charge accumulation region effective to suppress dark current, the charge accumulation region being devoid of implanted ions.
7 more elements
A camera comprising:
- an optical system;
- and
- a solid-state imaging device that receives incident light from the optical system,
- wherein, the solid state imaging device includes:
- an imaging region and a peripheral circuit region, the peripheral circuit region including at least one of a vertical selection circuit, a sample-and-hold correlated double sampling circuit, a horizontal selection circuit, a timing generator, an automatic gain control circuit, an A/D converter circuit and a digital amplifier;
- a substrate having oppositely facing first and second surfaces the second surface receiving the incident light;
- a photodetector of a first conductivity type in the substrate at the imaging region;
- a silicon oxide film on the light-receiving surface and extending over the imaging region and the peripheral circuit region;
- a first insulating film having an at least partially crystallized region on the silicon oxide film and extending over the imaging region and the peripheral circuit region, the first insulating film being composed of an oxide containing an element selected from the group consisting of hafnium, aluminum, tantalum, titanium, yttrium, and lanthanoids;
- a light-shielding film extending over the peripheral circuit region and a portion of the imaging region;
- a plurality of on-chip micro lenses over the first insulating film at the second side and disposed at least over the imaging region;
- a charge accumulation region at the second surface without a second conductivity type impurity region on or over the photodetector;
- and
- a wiring layer over the first surface, the wiring layer including a transfer gate of a transfer transistor.
11 more elements
A solid-state imaging device comprising:
- an imaging region and a peripheral circuit region, the peripheral circuit region including at least one of a vertical selection circuit, a sample-and-hold correlated double sampling circuit, a horizontal selection circuit, a timing generator, an automatic gain control circuit, an A/D converter circuit and a digital amplifier;
- a substrate having first and second sides, the second side having a light-receiving surface, the first side having an oppositely facing surface;
- a photodetector in the substrate at the imaging region;
- a silicon oxide film on the light-receiving surface and extending over the imaging region and the peripheral circuit region;
- a first insulating layer having an at least partially crystallized region on the silicon oxide film and extending over the imaging region and the peripheral circuit region, the first insulating film being composed of an oxide containing an element selected from the group consisting of hafnium, aluminum, tantalum, titanium, yttrium, and lanthanoids;
- a light-shielding film extending over the peripheral circuit region and a portion of the imaging region;
- a plurality of on-chip micro lenses over the first insulating film at the second side and disposed at least over the imaging region;
- a second insulating layer over the first insulating layer such that the first insulating layer is between the second insulating layer and the light-receiving surface;
- a wiring layer over the oppositely facing surface, the wiring layer including a transfer gate of a transfer transistor;
- and
- a hole accumulation region at the light-receiving surface, the hole accumulation region effective to suppress dark current, the hole accumulation region being devoid of implanted ions,
- wherein,
- the first and second insulating layers function as an antireflection film, and
- the first insulating layer affects a potential of the light-receiving surface such that the hole accumulation region is induced without requiring implantation of ions.
11 more elements
Dependencies are inferred from the claim text.