Semiconductor device
AssigneeFujitsu Limited
InventorAkira Endoh
Life of this patent
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Abstract
A semiconductor device includes: an electron transit layer formed with a semiconductor material, the electron transit layer being formed on a semiconductor substrate; an n-type semiconductor layer formed with a semiconductor material having a wider bandgap than the electron transit layer, the n-type semiconductor layer being formed on the electron transit layer; a δ doping area having an n-type impurity doped in a sheet-shaped region, the δ doping area being formed on the n-type semiconductor layer; and a barrier layer formed with a semiconductor material having a wider bandgap than the electron transit layer, the barrier layer being formed on the δ doping area.
Claims18
A semiconductor device comprising:
- an electron transit layer formed with a semiconductor material, the electron transit layer being formed on a semiconductor substrate;
- an n-type semiconductor layer formed with a semiconductor material having a wider bandgap than the electron transit layer, the n-type semiconductor layer being formed on the electron transit layer;
- a δ doping area having an n-type impurity doped in a sheet-shaped region, the δ doping area being formed on the n-type semiconductor layer;
- and
- a barrier layer formed with a semiconductor material having a wider bandgap than the electron transit layer, the barrier layer being formed on the δ doping area.
Dependencies are inferred from the claim text.