III-nitride heterojunction device

A III-nitride device comprising:

• a III-nitride heterojunction that includes a first III-nitride semiconductor body having one band gap, and a second III-nitride semiconductor body having another band gap disposed on said first III-nitride semiconductor body to generate a two dimensional electron gas;
• a first power electrode disposed over said III-nitride heterojunction and electrically coupled to said two dimensional electron gas;
• a second power electrode disposed over said III-nitride heterojunction and electrically coupled to said two dimensional electron gas;
• a gate arrangement disposed between said first power electrode and said second power electrode;
• spaced interrupted regions in said two-dimensional electron gas below said gate arrangement, wherein at least one of said spaced interrupted regions extends only partially under said gate arrangement.