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US 9,000,484 B2Granted
Non-uniform lateral profile of two-dimensional electron gas charge density in type III nitride HEMT devices using ion implantation through gray scale mask
AssigneeHRL Laboratories, LLC
InventorsSameh G. Khalil, Karim S. Boutros
Life of this patent
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Abstract
A high electron mobility field effect transistor (HEMT) includes a two dimensional electron gas (2DEG) in the drift region between the gate and the drain that has a non-uniform lateral 2DEG distribution that increases in a direction in the drift region from the gate to the drain.
Claims14
A high electron mobility field effect transistor (HEMT) comprising:
- lattice damage in a drift region of a carrier supply layer between a gate and a drain;
- wherein the lattice damage increases linearly along the drift region from near the drain to near the gate;
- and
- a two dimensional electron gas (2DEG) in the drift region between the gate and the drain that has a non-uniform lateral 2DEG distribution that increases in a direction in the drift region from the gate to the drain.
1 more element
A field effect transistor (FET) comprising:
- lattice damage in a drift region of a carrier supply layer between a gate and a drain;
- wherein the lattice damage increases linearly along the drift region near the drain to near the gate.
Dependencies are inferred from the claim text.