Semiconductor device with fin structure and fabrication method thereof
AssigneeUnited Microelectronics Corp.
InventorsShih-Fang Hong, Po-Chao Tsao
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Abstract
A semiconductor device includes a substrate, a first fin structure, an electrical contact structure and a gate structure. The first fin structure includes a horizontal fin structure extending along a first direction and a vertical fin structure extending along a second direction. The substrate has a first region and a second region. A portion of the horizontal fin structure and the vertical fin structure are disposed in the first region, and the electrical contact structure directly covers the horizontal fin structure and the vertical fin structure within the first region. The gate structure partially overlaps the horizontal fin structure within the second region.
Claims18
A semiconductor device comprising:
- a substrate, having a first region and a second region;
- a first fin structure, disposed on the substrate, the first fin structure comprising at least a horizontal fin structure extending along a first direction, and a vertical fin structure extending along a second direction, wherein portions of the horizontal fin structure and the vertical fin structure are disposed in the first region;
- an electrical contact structure, directly covering the horizontal fin structure and the vertical fin structure within the first region;
- and
- a gate structure, disposed on the substrate, wherein the gate structure partially overlaps the horizontal fin structure within the second region.
Dependencies are inferred from the claim text.