Semiconductor device

A semiconductor device, comprising a transistor cell and a diode cell connected in parallel between a first electrode and a second electrode, the first electrode provided on a first face side of a first conductivity type base layer, the second electrode provided on a second face side opposite to the first face,

• the transistor cell including:
• a second conductivity type base layer provided on the first conductivity type base layer;
• a first conductivity type semiconductor region provided on the second conductivity type base layer, and in contact with the first electrode;
• and
• a gate electrode provided in the second conductivity type base layer via a gate insulating film;
• the diode cell including:
• a second conductivity type semiconductor layer provided on the first conductivity type base layer;
• and
• a plurality of buried electrodes provided in the second conductivity type semiconductor layer via an insulating film, the buried electrodes being connected with the first electrode, the first electrode having a plurality of first parts, each of the first parts being connected to each of the buried electrodes;
• the second conductivity type semiconductor layer including:
• a first region contacting the first electrode, the first region having a part provided between the first parts;
• and
• a second region having a part provided between the buried electrodes, and a part provided between the buried electrode and the first conductivity type base layer.