Vertical topology light-emitting device
AssigneeLG Innotek Co., Ltd.
InventorMyung Cheol Yoo
Life of this patent
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Abstract
A vertical topology light emitting device comprises a metal support structure; an adhesion structure on the metal support structure, wherein the adhesion structure comprises a first adhesion layer and a second adhesion layer on the first adhesion layer; a metal layer on the adhesion structure, wherein the adhesion structure is thicker than the metal layer; a GaN-based semiconductor structure on the metal layer, wherein the GaN-based semiconductor structure has a thickness less than 5 micrometers; a multi-layered electrode structure on the GaN-based semiconductor structure; and a protective layer on a side surface and a top surface of the GaN-based semiconductor structure, wherein the protective layer is further disposed on the multi-layered electrode structure.
Claims20
A light emitting device, comprising:
- a metal support structure;
- an adhesion structure on the metal support structure, wherein the adhesion structure comprises a first adhesion layer and a second adhesion layer on the first adhesion layer;
- a metal layer on the adhesion structure, wherein the adhesion structure is thicker than the metal layer;
- a GaN-based semiconductor structure on the metal layer, wherein the GaN-based semiconductor structure has a thickness less than 5 micrometers;
- a multi-layered electrode structure on the GaN-based semiconductor structure;
- and
- a protective layer on a first side surface, a second side surface, and a top surface of the GaN-based semiconductor structure, wherein the protective layer is further disposed on the multi-layered electrode structure.
A light emitting device, comprising:
- a metal support structure;
- an adhesion structure on the metal support structure, wherein the adhesion structure comprises a first adhesion layer and a second adhesion layer on the first adhesion layer;
- a metal layer on the adhesion structure, wherein the adhesion structure is thicker than the metal layer;
- a GaN-based semiconductor structure on the metal layer, wherein the GaN-based semiconductor structure has a thickness less than 5 micrometers;
- a multi-layered electrode structure on the GaN-based semiconductor structure;
- and
- a protective layer on a first side surface, a second side surface, and a top surface of the GaN-based semiconductor structure, wherein the protective layer entirely covers a first side surface, a second side surface, and a top surface of the multi-layered electrode structure.
Dependencies are inferred from the claim text.