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US 9,000,468 B2Granted
Diode having vertical structure
AssigneeLG Innotek Co., Ltd.
InventorMyung Cheol Yoo
Life of this patent
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Abstract
A light emitting diode includes a conductive layer, an n-GaN layer on the conductive layer, an active layer on the n-GaN layer, a p-GaN layer on the active layer, and a p-electrode on the p-GaN layer. The conductive layer is an n-electrode.
Claims20
A light emitting device comprising:
- an Al layer;
- an undoped GaN buffer layer on the Al layer;
- an n-GaN layer on the undoped GaN buffer layer;
- an active layer comprising a multiple quantum well (MQW) layer on the n-GaN layer;
- a p-GaN layer on the active layer;
- and
- a transparent conductive layer comprising indium-tin-oxide (ITO) on the p-GaN layer;
- wherein the undoped GaN buffer layer is thicker than the Al layer.
5 more elements
A light emitting device comprising:
- a metal layer comprising Au;
- an Al layer on the metal layer;
- an undoped GaN buffer layer on the Al layer;
- an n-GaN layer on the undoped GaN buffer layer;
- an active layer comprising a multiple quantum well (MQW) layer on the n-GaN layer;
- a p-GaN layer on the active layer;
- and
- a transparent conductive layer comprising indium-tin-oxide (ITO) on the p-GaN layer;
- wherein a thickness of the undoped GaN buffer layer is thicker than a thickness of the Al layer.
6 more elements
A light emitting device comprising:
- a metal layer comprising Au;
- an Al layer on the metal layer;
- an undoped GaN buffer layer on the Al layer;
- an n-GaN layer on the undoped GaN buffer layer;
- an active layer comprising a multiple quantum well (MQW) layer on the n-GaN layer;
- a p-GaN layer on the active layer;
- and
- a transparent conductive layer comprising indium-tin-oxide (ITO) on the p-GaN layer;
- wherein the undoped GaN buffer layer is thicker than the Al layer,
- wherein ratio of a thickness of the Al layer to a thickness of the undoped GaN buffer layer is greater than 0.0075,
- wherein the n-GaN layer is doped with Si with a doping concentration of 1017 cm−3 or greater, and
- wherein the p-GaN layer is doped with Mg with a doping concentration of 1017 cm−3 or greater.
9 more elements
Dependencies are inferred from the claim text.