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US 9,000,466 B1Granted
Methods and devices for light extraction from a group III-nitride volumetric LED using surface and sidewall roughening
AssigneeSoraa, Inc.
InventorsRafael Aldaz, Aurelien David, Daniel F. Feezell, Thomas M. Katona, Rajat Sharma
Life of this patent
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Abstract
Embodiments of the present disclosures are directed to improved approaches for achieving high-performance light extraction from a Group III-nitride volumetric LED chips. More particularly, disclosed herein are techniques for achieving high-performance light extraction from a Group III-nitride volumetric LED chip using surface and sidewall roughening.
Claims25
A light emitting diode comprising:
- a gallium and nitrogen containing substrate comprising a surface region;
- an n-type epitaxial material overlying the surface region;
- one or more active regions overlying the n-type epitaxial material;
- a p-type epitaxial material overlying the one or more active regions;
- a first electrode coupled to the n-type epitaxial material, to the substrate, or to both the n-type epitaxial material and to the substrate;
- a second electrode coupled to the p-type epitaxial material;
- a top surface region comprising a top textured surface characterized by a top surface roughness of about 80 nm to about 10,000 nm;
- a base;
- and
- at least three lateral surface regions coupling the top surface region to the base, wherein at least one of the three lateral surface regions is characterized by a lateral surface roughness, wherein the at least one lateral surface region comprises a first portion and a second portion, wherein, the first portion comprise a one-dimensional surface roughness;
- and the second portion comprises a two-dimensional surface roughness.
8 more elements
A light emitting diode comprising:
- a gallium and nitrogen containing substrate comprising a surface region;
- an n-type epitaxial material overlying the surface region;
- one or more active regions overlying the n-type epitaxial material;
- a p-type epitaxial material overlying the one or more active regions;
- a first electrode coupled to the n-type epitaxial material, to the substrate, or to both the n-type epitaxial material and to the substrate;
- a second electrode coupled to the p-type epitaxial material;
- a triangular top surface region comprising a top textured surface;
- a triangular base;
- and
- three lateral surface regions coupling the top surface region to the base, wherein each of the at least three lateral surface regions comprises a first portion and a second portion, wherein, the first portion comprise a one-dimensional surface roughness;
- and the second portion comprises a two-dimensional surface roughness.
8 more elements
Dependencies are inferred from the claim text.