Semiconductor structure for substrate separation and method for manufacturing the same

A semiconductor structure, comprising:

• a temporary substrate;
• a semiconductor layer positioned on the temporary substrate;
• a plurality of patterned nano-scaled protrusions disposed on the semiconductor layer;
• a dielectric layer surrounding the plurality of patterned nano-scaled protrusions and disposed on the semiconductor layer;
• an n-type conductive film on the plurality of patterned nano-scaled protrusions;
• a light emitting active film on the n-type film;
• a p-type conductive film on the light emitting active film;
• and
• a reflective layer disposed between the p-type conductive film and a permanent substrate;
• wherein the dielectric layer has a thickness equal to or less than the height of the patterned nano-scaled protrusions, and top surfaces of the patterned nano-scaled protrusions are not covered by the dielectric layer;
• wherein the plurality of patterned nano-protrusions having a plurality of noncontinuous top surfaces and a continuous bottom surface on the temporary substrate;
• wherein the permanent substrate is composed of material with high thermal and high electrical conductivity.