Solid state lighting devices with accessible electrodes and methods of manufacturing
AssigneeMicron Technology, Inc.
InventorsMartin F. Schubert, Vladimir Odnoblyudov
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Abstract
Various embodiments of light emitting dies and solid state lighting (“SSL”) devices with light emitting dies, assemblies, and methods of manufacturing are described herein. In one embodiment, a light emitting die includes an SSL structure configured to emit light in response to an applied electrical voltage, a first electrode carried by the SSL structure, and a second electrode spaced apart from the first electrode of the SSL structure. The first and second electrode are configured to receive the applied electrical voltage. Both the first and second electrodes are accessible from the same side of the SSL structure via wirebonding.
Claims12
A light emitting device, comprising:
- a first semiconductor material;
- a second semiconductor material spaced apart from the first semiconductor material;
- an active region between the first and second semiconductor materials;
- an opening extending completely through the second semiconductor material and the active region and only a portion of the first semiconductor material;
- a passivation material having a first passivation portion lining a sidewall of the opening and a second passivation portion extending laterally relative to the first passivation portion external to the opening;
- a first electrode in the opening and adjacent the first passivation portion;
- and
- a second electrode external to the opening between the second semiconductor material and the second passivation portion of the passivation material, a portion of the second electrode being exposed through the first semiconductor material, the active region, and the second semiconductor material;
- and
- a non-conductive substrate proximate the second semiconductor material.
A light emitting device, comprising:
- a first semiconductor material;
- a second semiconductor material spaced apart from the first semiconductor material;
- an active region between the first and second semiconductor materials;
- a first electrode extending through the second semiconductor material, the active region and a portion of the first semiconductor material, wherein the first electrode includes:
- a covered portion, and
- an exposed portion extending from the covered portion of the first electrode, wherein the exposed portion of the first electrode is exposed through the first semiconductor material, the active region, and the second semiconductor material;
- and
- a second electrode in contact with the second semiconductor material and surrounding at least a portion of the first electrode, wherein the second electrode includes—
- a covered portion, and
- an exposed portion extending from the covered portion of the second electrode, wherein the portion of the second electrode is exposed through the first semiconductor material, the active region, the second semiconductor material, and the first electrode.
Dependencies are inferred from the claim text.