# US 9,000,445 B2 · Light emitting diode with wave-shaped Bragg reflective layer and method for manufacturing same

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- Number: US 9,000,445 B2
- Document ID: US9000445B2
- Status: Granted
- Kind: B2
- Application number: 14/083,361
- Filed: 2013-11-18
- Published: 2014-10-02
- Granted: 2015-04-07
- Earliest claimed: 2013-03-27
- Assignees: Advanced Optoelectronic Technology, Inc.
- Applicants: Advanced Optoelectronic Technology, Inc.
- Inventors: Ching-Hsueh Chiu; Ya-Wen Lin; Po-Min Tu; Shih-Cheng Huang
- Web page: https://patentgrep.com/patent/US9000445B2

## CPC

- H10H 20/825: containing nitrogen, e.g. GaN
- H10H 20/01335: {the light-emitting regions comprising nitride materials}
- H10H 20/814: having reflecting means, e.g. semiconductor Bragg reflectors
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

An exemplary light emitting diode includes a substrate and a first undoped GaN layer formed on the substrate. The first undoped GaN layer has ion implanted areas on an upper surface thereof. A plurality of second undoped GaN layers is formed on the first undoped GaN layer. Each of the second undoped GaN layers is island shaped and partly covers at least one corresponding ion implanted area. A Bragg reflective layer is formed on the second undoped GaN layer and on portions of upper surfaces of the ion implanted areas not covered by the second undoped GaN layers. An n-type GaN layer, an active layer and a p-type GaN layer are formed on an upper surface of the Bragg reflective layer in that sequence. A method for manufacturing the light emitting diode is also provided.

## Claims

### Claim 1

A light emitting diode, comprising:
a substrate;
a first undoped gallium nitride (GaN) layer formed on the substrate, the first undoped GaN layer having a plurality of ion implanted areas in an upper surface thereof;
a plurality of second undoped GaN layers formed on the first undoped GaN layer, each of the second undoped GaN layers being island shaped and partly covering at least one corresponding ion implanted area;
a Bragg reflective layer formed on the second undoped GaN layers and on portions of upper surfaces of the ion implanted areas not covered by the second undoped GaN layers; and
an n-type GaN layer, an active layer and a p-type GaN layer formed on an upper surface of the Bragg reflective layer in that sequence.

### Claim 2 (depends on 1)

The light emitting diode of claim 1, wherein the ion implanted areas are implanted with one item selected from the group consisting of argon (Ar) ions and silicon (Si) ions.

### Claim 3 (depends on 2)

The light emitting diode of claim 2, wherein a concentration of ions in the ion implanted areas is in a range of from about 5*1015 cm−3 to about 1*1017 cm−3.

### Claim 4 (depends on 2)

The light emitting diode of claim 2, wherein a depth of each ion implanted area is in a range of from about 50 nanometers (nm) to about 150 nm.

### Claim 5 (depends on 1)

The light emitting diode of claim 1, wherein a height of each second undoped GaN layer is in a range of from about 50 nanometers (nm) to about 300 nm.

### Claim 6 (depends on 1)

The light emitting diode of claim 1, wherein a width of each second undoped GaN layer is no less than about 3 micrometers (μm).

### Claim 7 (depends on 1)

The light emitting diode of claim 1, wherein the Bragg reflective layer comprises a plurality of aluminum nitride (AlN) layers and GaN layers alternately stacked one on the other.

### Claim 8

A method for manufacturing a light emitting diode, comprising:
providing a substrate;
forming a first undoped gallium nitride (GaN) layer on the substrate;
forming a plurality of ion implanted areas in an upper surface of the first undoped GaN layer;
forming a plurality of second undoped GaN layers on the upper surface of the first undoped GaN layer and upper surfaces of the ion implanted areas, each of the second undoped GaN layers being island shaped, a gap being provided between each two adjacent second undoped GaN layers to expose part of the upper surface of a corresponding one of the ion implanted areas;
forming a Bragg reflective layer on upper surfaces of the second undoped GaN layers and portions of the upper surfaces of the ion implanted areas not covered by the second undoped GaN layers; and
forming an n-type GaN layer, an active layer and a p-type GaN layer on an upper surface of the Bragg reflective layer in that sequence.

### Claim 9 (depends on 8)

The method of claim 8, wherein the ion implanted areas are implanted with one item selected from the group consisting of argon (Ar) ions and silicon (Si) ions.

### Claim 10 (depends on 9)

The method of claim 9, wherein a concentration of ions in the ion implanted areas is in a range of from about 5*1015 cm−3 to about 1*1017 cm−3.

### Claim 11 (depends on 9)

The method of claim 9, wherein a depth of each ion implanted area is in a range of from about 50 nanometers (nm) to about 150 nm.

### Claim 12 (depends on 8)

The method of claim 8, wherein a height of each second undoped GaN layer is in a range of from about 50 nanometers (nm) to about 300 nm.

### Claim 13 (depends on 8)

The method of claim 8, wherein a width of each second undoped GaN layer is no less than about 3 micrometers (μm).

### Claim 14 (depends on 8)

The method of claim 8, wherein the Bragg reflective layer comprises a plurality of aluminum nitride (AlN) layers and GaN layers alternately stacked one on the other.

### Claim 15

A light emitting diode, comprising:
a substrate;
a first undoped gallium nitride (GaN) layer formed on the substrate, the first undoped GaN layer having a plurality of ion implanted areas in an upper surface thereof;
a plurality of second undoped GaN layers formed on the first undoped GaN layer, each of the second undoped GaN layers having a trapezoidal cross-section and partly covering at least one corresponding ion implanted area;
a Bragg reflective layer, having a wave-shaped cross-section and formed on the second undoped GaN layers and on portions of upper surfaces of the ion implanted areas not covered by the second undoped GaN layers; and
an n-type GaN layer, an active layer and a p-type GaN layer formed on an upper surface of the Bragg reflective layer in that sequence.

### Claim 16 (depends on 15)

The light emitting diode of claim 15, wherein the cross-section of each second undoped GaN layer is an isosceles trapezoid.

### Claim 17 (depends on 15)

The light emitting diode of claim 15, wherein the ion implanted areas are planted with one item selected from the group consisting of Ar ions and Si ions.

### Claim 18 (depends on 17)

The light emitting diode of claim 17, wherein a concentration of the ion implanted areas is in a range of from about 5*1015 cm−3 to about 1*1017 cm−3.

### Claim 19 (depends on 15)

The light emitting diode of claim 15, wherein a width of the second undoped GaN layer is no less than about 3 micrometers (μm).

### Claim 20 (depends on 15)

The light emitting diode of claim 15, wherein the Bragg reflective layer comprises a plurality of aluminum nitride (AlN) layers and GaN layers alternately stacked one on the other.