US 9,000,441 B2Granted

Semiconductor device and display device

AssigneeSemiconductor Energy Laboratory Co., Ltd.

InventorsDaisuke Kawae, Yoshiyuki Kurokawa, Hidekazu Miyairi

Life of this patent

Estimating the term…

Loading patent…

Abstract

A thin film transistor whose threshold voltage can be controlled and which has a favorable switching characteristic is provided. The thin film transistor includes a first gate electrode layer; a semiconductor layer; a first gate insulating layer provided between the first gate electrode layer and the semiconductor layer; source electrode and drain electrode layers which are provided over the semiconductor layer; a conductive layer covered by the first gate insulating layer and the semiconductor layer and provided so as to overlap with part of the first gate electrode layer; a second gate insulating layer provided so as to cover at least a back channel portion of the semiconductor layer; and a second gate electrode layer provided over the second gate insulating layer so as to overlap with the back channel portion of the semiconductor layer.

Claims9

Dependent claims

A semiconductor device comprising:

a first gate electrode layer over a substrate;
a first gate insulating layer over the first gate electrode layer;
a conductive layer over and in contact with the first gate insulating layer, the conductive layer overlapping the first gate electrode layer;
a semiconductor layer over the conductive layer and the first gate insulating layer;
a source electrode layer over the semiconductor layer, the source electrode layer overlapping a first portion of the first gate electrode layer;
a drain electrode layer over the semiconductor layer, the drain electrode layer overlapping a second portion of the first gate electrode layer;
a second gate insulating layer over the semiconductor layer;
and
a second gate electrode layer over the second gate insulating layer, the second gate electrode layer overlapping a third portion of the first gate electrode layer between the first portion and the second portion,
wherein the semiconductor layer is in contact with the first gate insulating layer over the third portion of the first gate electrode layer.

7 more elements

Dependencies are inferred from the claim text.

Facts

Application: 12/504,897Filed 17 Jul 2009
Priority: JP 2008-2023875 Aug 2008
Published: US 2010/0032679 A111 Feb 2010
Granted: 7 Apr 2015
Term ends: Not estimatedThe source records don’t support an estimate.

Classification11 codes

H10D 86/0231
Of multiple TFTs: using masks, e.g. half-tone masks
H10D 30/0316
Characterised by the gate electrodes: of lateral bottom-gate TFTs comprising only a single gate
H10D 30/0321
Of thin-film transistors [TFT]: comprising silicon, e.g. amorphous silicon or polysilicon
H10D 30/6733
Characterised by the shapes, relative sizes or dispositions of the gate electrodes: multi-gate TFTs