Semiconductor device and manufacturing method thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsMasami Jintyou, Yamato Aihara
Life of this patent
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Abstract
It is an object to provide a display device of which image display can be favorably recognized. Another object is to provide a manufacturing method of the display device with high productivity. Over a substrate, a pixel electrode that reflects incident light through a liquid crystal layer, a light-transmitting pixel electrode, and a structure whose side surface is covered with a reflective layer and which is positioned to overlap with the light-transmitting pixel electrode are provided. The structure is formed over a light-transmitting etching-stop layer, and the etching-stop layer remains below the structure as a light-transmitting layer.
Claims19
A semiconductor device comprising:
- a structure including a side surface, a bottom surface and a top surface;
- a first pixel electrode;
- a second pixel electrode over the structure;
- a first transistor electrically connected to the first pixel electrode;
- a second transistor electrically connected to the second pixel electrode;
- a liquid crystal over the structure, the first pixel electrode, the second pixel electrode, the first transistor, and the second transistor;
- and
- a reflective layer covering the side surface of the structure,
- wherein an area of the bottom surface of the structure is larger than an area of the top surface of the structure.
A semiconductor device comprising a plurality of pixels, each of the plurality of pixels comprising:
- a structure including a side surface, a bottom surface and a top surface;
- a first pixel electrode;
- a second pixel electrode over the structure;
- a first transistor electrically connected to the first pixel electrode;
- a second transistor electrically connected to the second pixel electrode;
- and
- a reflective layer covering the side surface of the structure,
- wherein an area of the bottom surface of the structure is larger than an area of the top surface of the structure.
A semiconductor device comprising:
- a structure including a side surface, a bottom surface and a top surface;
- a transparent pixel electrode over the structure;
- a reflective pixel electrode;
- a first transistor electrically connected to the transparent pixel electrode;
- a second transistor electrically connected to the reflective pixel electrode;
- and
- a reflective layer covering the side surface of the structure,
- wherein an area of the bottom surface of the structure is larger than an area of the top surface of the structure.
Dependencies are inferred from the claim text.