Back to results
US 9,000,432 B2Granted
Enhanced electron mobility at the interface between GD2O3(100)/N-SI(100)
AssigneeThe University of North Carolina at Charlotte
InventorsRaphael Tsu, Wattaka Sitapura, John Hudak
Life of this patent
Estimating the term…
Abstract
A multilayered structure is provided. The multilayered structure may include a silicon substrate and a film of gadolinium oxide disposed on the silicon substrate. The top surface of the silicon substrate may have silicon orientated in the 100 direction (Si(100)) and the gadolinium oxide disposed thereon may have an orientation in the 100 direction (Gd2O3(100)).
Claims6
A multilayered structure comprising
- a silicon substrate comprising a top surface having silicon orientated in the 100 direction (Si(100));
- and
- a film of gadolinium oxide disposed on the silicon substrate and having an orientation in the 100 direction (Gd2O3(100)) so that oxygen vacancies are created at an interface between Gd2O3(100) and Si(100).
Dependencies are inferred from the claim text.