# US 9,000,430 B2 · EL display device and method for producing same

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- Number: US 9,000,430 B2
- Document ID: US9000430B2
- Status: Granted
- Kind: B2
- Application number: 14/357,269
- Filed: 2012-11-16
- Published: 2014-10-23
- Granted: 2015-04-07
- Earliest claimed: 2011-11-24
- Assignees: Panasonic Corporation
- Applicants: Panasonic Corporation
- Inventors: Takashi Isobe
- Web page: https://patentgrep.com/patent/US9000430B2

## CPC

- H05B 33/10: Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
- H10K 50/11: characterised by the electroluminescent [EL] layers
- H10K 50/166: {comprising a multilayered structure}
- H10K 50/17: Carrier injection layers
- H10K 59/1315: {comprising structures specially adapted for lowering the resistance}
- H10K 59/80522: {combined with auxiliary electrodes}
- H10K 59/80523: {Multilayers, e.g. opaque multilayers}
- H10K 59/123: Connection of the pixel electrodes to the thin film transistors [TFT]
- H10K 59/80518: {Reflective anodes, e.g. ITO combined with thick metallic layers}
- H10K 59/873: {Encapsulations}
- H05B: ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

To provide a device whose life is less likely to be reduced by deterioration of a light-emitting layer material, an EL display device includes: a pixel electrode, for each pixel, above a substrate; auxiliary wiring in a different region, above the substrate, from the pixel electrode; a transition metal oxide layer on the pixel electrode and the auxiliary wiring; a light-emitting layer in a region, above the transition metal oxide layer, corresponding to the pixel; a common electrode continuously above the auxiliary wiring and the light-emitting layer, and electrically connected to the auxiliary wiring; and a material deterioration suppressing layer continuously on a portion of the transition metal oxide layer above the auxiliary wiring and the light-emitting layer, mainly containing barium, and having a thickness equal to or greater than a size of a single barium atom and smaller than 10 nm.

## Claims

### Claim 1

An EL display device, comprising:
a pixel electrode provided, for each pixel, above a substrate;
auxiliary wiring provided in a region, above the substrate, different from a region in which the pixel electrode is provided;
a transition metal oxide layer provided at least on the pixel electrode and on the auxiliary wiring;
a light-emitting layer provided at least in a region, above the transition metal oxide layer, corresponding to said each pixel; and
a common electrode provided continuously above the auxiliary wiring and above the light-emitting layer, and electrically connected to the auxiliary wiring, wherein
a material deterioration suppressing layer is provided continuously in physical contact with a portion of the transition metal oxide layer above the auxiliary wiring and in physical contact with the light-emitting layer, the material deterioration suppressing layer containing barium as a major component, and having a thickness that is equal to or greater than a size of a single barium atom and is smaller than 10 nm.

### Claim 2 (depends on 1)

The EL display device of claim 1, wherein
the thickness of the material deterioration suppressing layer is equal to or greater than 5 nm.

### Claim 3 (depends on 1)

The EL display device of claim 1, wherein
an organic functional layer containing barium is provided on the material deterioration suppressing layer, and
the common electrode contains metal oxide.

### Claim 4 (depends on 1)

The EL display device of claim 1, wherein
the light-emitting layer emits blue light, and
the light-emitting layer has a thickness of 70 nm or greater and 90 nm or smaller.

### Claim 5 (depends on 1)

The EL display device of claim 1, wherein
the light-emitting layer emits blue light, and
current density per unit area in the light-emitting layer is 30 mA/cm2 or higher and 40 mA/cm2 or lower.

### Claim 6 (depends on 1)

The EL display device of claim 1, wherein
the transition metal oxide layer contains molybdenum or tungsten.

### Claim 7 (depends on 1)

The EL display device of claim 1, wherein
the transition metal oxide layer is a hole injection layer.

### Claim 8 (depends on 1)

The EL display device of claim 1, wherein
the light-emitting layer contains an organic polymeric material.

### Claim 9

A method for manufacturing an EL display device, comprising:
forming, for each pixel, a pixel electrode above a substrate;
forming auxiliary wiring in a region, above the substrate, different from a region in which the pixel electrode is formed;
forming a transition metal oxide layer continuously on the pixel electrode and on the auxiliary wiring;
forming a light-emitting layer at least in a region, above the transition metal oxide layer, corresponding to said each pixel;
forming a material deterioration suppressing layer continuously in physical contact with a portion of the transition metal oxide layer above the auxiliary wiring and in physical contact with the light-emitting layer, the material deterioration suppressing layer containing barium as a major component, and having a thickness that is equal to or greater than a size of a single barium atom and is smaller than 10 nm; and
forming a common electrode above the material deterioration suppressing layer, the common electrode being electrically connected to the auxiliary wiring.