Field effect transistor, method of manufacturing the same, and electronic device using the same

An electronic device comprising:

• at least one field-effect transistor, the field-effect transistor comprising a semiconductor layer having a portion functioning as a channel region,
• the semiconductor layer comprising a plurality of electrically conductive microparticles dispersed in the semiconductor layer, organic semiconductor molecules chemically bonded to the microparticles so as to link the microparticles to one another, and cyclic molecules,
• each of the organic semiconductor molecules comprising a π-electron conjugated chain as its main chain,
• the π-electron conjugated chain being insulated by the cyclic molecules,
• the average main chain length of the organic semiconductor molecules being within the range of from 10 nm to 30 nm and being within the range of from 1 to 3 times the average particle size of the microparticles, and
• the average particle size of the microparticles being within the range of from 10 nm to 30 nm.

A method of manufacturing a field-effect transistor comprising a semiconductor layer containing a plurality of electrically conductive microparticles, the method comprising:

• (I) contacting the plurality of the microparticles with organic semiconductor molecules in a solvent, the organic semiconductor molecules each comprising a π-electron conjugated chain insulated by cyclic molecules and two end groups that are disposed at opposing ends of the π-electron conjugated chain and are chemically bonded to the microparticles, to chemically bond the microparticles and the end groups of the organic semiconductor molecules;
• and
• (II) removing the solvent;
• wherein the average main chain length of the organic semiconductor molecules being within the range of from 10 nm to 30 nm and being within the range of from 1 to 3 times the average particle size of the microparticles, and
• the average particle size of the microparticles being within the range of from 10 nm to 30 nm.