Nanoparticle synthesis
AssigneeMassachusetts Institute of Technology
InventorsSilvija Gradecak, Chun-Hao Tseng, Sung Keun Lim
Life of this patent
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Abstract
A noble metal nanoparticle can be grown on a semiconductor substrate by contacting a predetermined region of the substrate with a solution including noble metal ions. The predetermined region of the semiconductor substrate can be exposed by applying a polymeric layer over the substrate selectively removing a portion of the polymeric layer. The nanoparticles can be prepared in a predetermined pattern. The nanoparticle can be formed with a barrier separating it from another nanoparticle on the substrate; for example, nanoparticle can be located in a pit etched in the substrate. The size and location of the nanoparticle can be stable at elevated temperatures.
Claims12
A composition comprising:
- a noble metal nanoparticle positioned on a predetermined region of a semiconductor substrate, the noble metal nanoparticle being separated from another nanoparticle on the substrate by a barrier, wherein the barrier is a portion of the semiconductor substrate that is raised relative to the region of the semiconductor substrate upon which the nanoparticle is positioned.
A nanomaterial comprising:
- a noble metal nanocrystal;
- and
- an amorphous layer comprising an oxide at least partially surrounding the nanoparticle.
Dependencies are inferred from the claim text.