Light emitting device

A light emitting device package comprising:

• a first lead frame and a second lead frame;
• a flip-chip light emitting device electrically connected to the first lead frame and the second lead frame via solders;
• and
• a mold surrounding the light emitting device,
• wherein the light emitting device comprises a substrate, a light emitting semiconductor structure disposed on the substrate, and an intermediate layer interposed between the light emitting semiconductor structure and the substrate,
• wherein:
• the light emitting semiconductor structure comprises a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, wherein the active layer has a multi quantum well structure comprising at least one period of a pair structure of a quantum barrier layer comprising AlxGa(1-x)N (0<x<1) and a quantum well layer comprising AlyGa(1-y)N (0<y<1), and at least one of the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer comprises AlGaN;
• and
• the intermediate layer comprises AlN and has a plurality of air voids formed in the AlN, wherein at least some of the air voids are irregularly aligned and the number of the air voids is 107/cm2 to 1010/cm2.

A sterilizer comprising:

• a light emitting device mounted on one surface of a housing;
• a diffuse reflection member to diffusively reflect light emitted from the light emitting device;
• and
• a power supply to supply power to the light emitting device,
• wherein the light emitting device comprises a substrate, a light emitting semiconductor structure disposed on the substrate, and an intermediate layer interposed between the light emitting semiconductor structure and the substrate,
• wherein:
• the light emitting semiconductor structure comprises a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, wherein the active layer has a multi quantum well structure comprising at least one period of a pair structure of a quantum barrier layer comprising AlxGa(1-x)N (0<x<1) and a quantum well layer comprising AlyGa(1-y)N (0<y<1), and at least one of the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer comprises AlGaN;
• and
• the intermediate layer comprises AlN and has a plurality of air voids formed in the AlN, wherein at least some of the air voids are irregularly aligned and the number of the air voids is 107/cm2 to 1010/cm2.