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US 9,000,414 B2Granted
Light emitting diode having heterogeneous protrusion structures
AssigneeKorea Photonics Technology Institute
InventorsSang-Mook Kim, Jong-Hyeob Baek
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Abstract
An object of the present invention is to provide a light emitting diode having a heterogeneous material structure and a method of manufacturing thereof, in which efficiency of extracting light to outside is improved by forming depressions and prominences configured of heterogeneous materials different from each other before or in the middle of forming a semiconductor material on a substrate in order to improve the light extraction efficiency.
Claims6
A light emitting diode comprising:
- a substrate;
- an n-type semiconductor layer formed on the substrate;
- an active layer formed on the n-type semiconductor layer;
- a p-type semiconductor layer formed on the active layer;
- a transparent electrode layer formed on the p-type semiconductor layer;
- a first electrode layer formed on the transparent electrode layer;
- a second electrode layer formed in an area where the n-type semiconductor layer is exposed by etching the transparent electrode layer, the p-type semiconductor layer and the active layer;
- a protrusion formed on the p-type semiconductor layer;
- and
- a mask material formed on the top of the protrusion, wherein
- the mask material has a refractive index that is different from a refractive index of the protrusion.
8 more elements
Dependencies are inferred from the claim text.