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US 9,000,411 B2Granted
Memristor devices configured to control bubble formation
AssigneeHewlett-Packard Development Company, L.P.
InventorsZhiyong Li, Alexandre M. Bratkovski, Jianhua Yang
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Abstract
Various embodiments of the present invention are direct to nanoscale, reconfigurable, two-terminal memristor devices. In one aspect, a device (400) includes an active region (402) for controlling the flow of charge carriers between a first electrode (104) and a second electrode (106). The active region is disposed between the first electrode and the second electrode and includes a storage material. Excess mobile oxygen ions formed within the active region are stored in the storage material by applying a first voltage.
Claims17
A device comprising:
- an active region configured to control the flow of charge carriers between a first electrode and a second electrode, the active region being disposed between the first electrode and the second electrode and comprising a plurality of oxygen storage material regions,
- wherein mobile dopant anions associated with the plurality of oxygen storage material regions formed within the active region migrate from the active region and are trapped and stored in the plurality of oxygen storage material regions in response to applying a first voltage at the first electrode relative to the second electrode, and
- wherein the mobile dopant anions are released from the plurality of oxygen storage material regions and migrate to the active region in response to a second voltage at the first electrode relative to the second electrode that is opposite in polarity of the first voltage.
A device comprising:
- an undoped primary active region comprising at least one material for transporting mobile dopant anions and dopant vacancies that controls a flow of charge carriers through the device between a first electrode and a second electrode;
- a doped secondary active region comprising at least one material for providing a source/sink of the mobile dopant anions and the dopant vacancies for the at least one primary active region;
- and
- a plurality of storage material regions, wherein the mobile dopant anions associated with the plurality of storage material regions formed within the doped secondary active region migrate from the doped secondary active region via the undoped primary active region and are trapped and stored in the plurality of storage material regions in response to applying a first voltage at the first electrode relative to the second electrode, and the mobile dopant anions are released from the plurality of storage material regions and migrate to the doped secondary active region via the undoped primary active region in response to a second voltage at the first electrode relative to the second electrode that is opposite in polarity of the first voltage.
1 more element
Dependencies are inferred from the claim text.