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US 9,000,410 B2Granted
Nonvolatile memory device
AssigneeKabushiki Kaisha Toshiba
InventorKoichi Kubo
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Abstract
According to one embodiment, a nonvolatile memory device includes a first conductive unit, a second conductive unit, and a memory layer. The memory layer is provided between the first conductive unit and the second conductive unit. The memory layer is capable of reversibly transitioning between a first state with a low resistance and a second state with a higher resistance than the first state due to a current supplied via the first conductive unit and the second conductive unit. The memory layer has a chalcopyrite structure.
Claims20
A nonvolatile memory device comprising:
- a first conductive unit;
- a second conductive unit;
- and
- a memory layer provided between the first conductive unit and the second conductive unit, capable of reversibly transitioning between a first state with a low resistance and a second state with a higher resistance than the first state due to a current supplied via the first conductive unit and the second conductive unit, and having a chalcopyrite structure.
1 more element
Dependencies are inferred from the claim text.