# US 9,000,343 B2 · Solid-state imaging apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,000,343 B2 - Document ID: US9000343B2 - Status: Granted - Kind: B2 - Application number: 13/807,002 - Filed: 2011-06-23 - Published: 2013-04-18 - Granted: 2015-04-07 - Earliest claimed: 2010-06-30 - Assignees: Canon Kabushiki Kaisha - Applicants: Takeshi Ichikawa; Mineo Shimotsusa; Genzo Momma - Inventors: Takeshi Ichikawa; Mineo Shimotsusa; Genzo Momma - Web page: https://patentgrep.com/patent/US9000343B2 ## CPC - H10F 39/811: {Interconnections} - H10F 39/18: Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors - H10F 39/182: {Colour image sensors} - H10F 39/199: {Back-illuminated image sensors} - H10F 39/802: {Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes} - H10F 39/803: {Pixels having integrated switching, control, storage or amplification elements} - H10F 39/809: {of hybrid image sensors} - H10F 39/813: {Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels} - H10F 39/018: {of hybrid image sensors} - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION ## Abstract The present invention relates to a solid-state imaging apparatus including a first substrate having a plurality of photoelectric conversion units and a second substrate having a plurality of readout circuits. The first substrate is provided with a plurality of first conductive patterns that are electrically separated from one another and the second substrate is provided with a plurality of second conductive patterns that are electrically separated from one another. The first conductive patterns each include a first partial pattern extending in a first direction. The second conductive patterns each include a partial pattern extending in a second direction different from the first direction. The first partial pattern has a length extending in the first direction longer than a length thereof in the second direction. ## Claims ### Claim 1 A solid-state imaging apparatus including a first substrate on which a plurality of photoelectric conversion units are arranged and a second substrate on which a plurality of readout circuits to process or read a signal generated by each of the photoelectric conversion units are arranged, the solid-state imaging apparatus comprising: a plurality of first conductive patterns which are arranged on the first substrate and electrically separated from one another; and a plurality of second conductive patterns which are arranged on the second substrate and electrically separated from one another, wherein each of the plurality of first conductive patterns has a first electrical connection portion to be in contact with at least one of the second conductive pattern, and each of the plurality of second conductive patterns has a second electrical connection portion to be in contact with at least one of the first conductive patterns, wherein the first conductive pattern includes a first partial pattern that includes the first electrical connection portion and extends in a first direction, and the second conductive pattern includes a second partial pattern that includes the second electrical connection portion and extends in a second direction different from the first direction, and wherein the first partial pattern has a length extending in the first direction longer than a length thereof in the second direction. ### Claim 2 (depends on 1) The solid-state imaging apparatus according to claim 1, wherein the first direction perpendicularly intersects the second direction. ### Claim 3 (depends on 1) The solid-state imaging apparatus according to claim 1, further comprising: a plurality of pixels, each pixel including the photoelectric conversion unit, a floating diffusion, a transfer unit configured to transfer a signal from the photoelectric conversion unit to the floating diffusion, a pixel amplification unit electrically connected to the floating diffusion at a gate thereof, and a pixel reset unit configured to reset an electric potential at an input node of the pixel amplification unit, wherein a plurality of the photoelectric conversion units, a plurality of the floating diffusions, and a plurality of the transfer units are arranged on the first substrate, and a plurality of the pixel amplification units and a plurality of the pixel reset units are arranged on the second substrate, and wherein the plurality of first conductive patterns is electrically connected to the plurality of floating diffusions respectively, and the plurality of second conductive patterns is electrically connected to the plurality of gates of the pixel amplification units respectively. ### Claim 4 (depends on 3) The solid-state imaging apparatus according to claim 3, wherein at least part of the plurality of first conductive patterns and the plurality of second conductive patterns is arranged to extend to a part of a region in which the photoelectric conversion unit is vertically projected in a direction to the second substrate. ### Claim 5 (depends on 3) The solid-state imaging apparatus according to claim 3, wherein the plurality of the floating diffusions, the plurality of the transfer units configured to transfer a signal from each of the photoelectric conversion units to the floating diffusions, and a plurality of transfer control lines configured to control conduction of the transfer units are arranged on the first substrate, and a vertical scan unit configured to supply drive pulses to the plurality of transfer control lines is arranged on the second substrate, wherein the plurality of first conductive patterns is electrically connected to the plurality of transfer control line respectively, and wherein each of the plurality of second conductive patterns is electrically connected to the vertical scan unit. ### Claim 6 (depends on 1) The solid-state imaging apparatus according to claim 1, wherein the first conductive patterns each have a plurality of the first electrical connection portions, and wherein the second conductive pattern each have a plurality of the second electrical connection portions. ### Claim 7 (depends on 1) The solid-state imaging apparatus according to claim 1, wherein at least the plurality of first conductive patterns or the plurality of second conductive patterns are formed by a plurality of wiring layers. ### Claim 8 (depends on 1) The solid-state imaging apparatus according to claim 1, wherein each of the first conductive patterns further includes a third partial pattern extending in the second direction, wherein each of the second conductive patterns further includes a fourth partial pattern extending in the first direction, wherein the third partial pattern includes a third electrical connection portion to be in contact with the fourth partial pattern, and wherein the fourth partial pattern further includes a fourth electrical connection portion to be in contact with the third partial pattern. ### Claim 9 (depends on 1) The solid-state imaging apparatus according to claim 1, wherein at least the plurality of first conductive patterns or the plurality of second conductive patterns has a damascene structure. ### Claim 10 (depends on 1) The solid-state imaging apparatus according to claim 1, further comprising: a plurality of pixels, each pixel including the photoelectric conversion unit, a floating diffusion, and a transfer unit configured to transfer a signal from the photoelectric conversion unit to the floating diffusion, wherein a plurality of sets of the photoelectric conversion unit, the floating diffusion, and the transfer unit are arranged on the first substrate at a predetermined pixel pitch, and wherein the first partial pattern has a length parallel to the first direction shorter than the pixel pitch. ### Claim 11 (depends on 1) The solid-state imaging apparatus according to claim 1, further comprising: a plurality of pixels, each pixel including the photoelectric conversion unit, a floating diffusion, a transfer unit configured to transfer a signal from the photoelectric conversion unit to the floating diffusion, a pixel amplification unit electrically connected to the floating diffusion at a gate thereof, and a pixel reset unit configured to reset an electric potential at an input node of the pixel amplification unit, wherein the plurality of photoelectric conversion units, the plurality of floating diffusions, and the plurality of transfer units are arranged on the first substrate, wherein the plurality of pixel amplification units and the plurality of pixel reset units are arranged on the second substrate, wherein the pixel amplification unit and the pixel reset unit are shared by the plurality of the photoelectric conversion units, wherein the plurality of photoelectric conversion units is arranged at a predetermined pixel pitch, and wherein a condition of L is larger than or equal to ((n−1)*p) and is smaller than or equal to (n*p) is satisfied where L is a length of the first partial pattern in the first direction, n is the number of the photoelectric conversion units to be shared, and p is the pixel pitch. ### Claim 12 A solid-state imaging apparatus including a first substrate on which a plurality of photoelectric conversion units are arranged and a second substrate on which a plurality of readout circuits to process or read a signal generated by each of the photoelectric conversion units are arranged, the solid-state imaging apparatus comprising: a plurality of first conductive patterns which are arranged on the first substrate and electrically separated from one another; and a plurality of second conductive patterns which are arranged on the second substrate and electrically separated from one another, wherein each of the plurality of first conductive patterns has a first electrical connection portion to be in contact with at least one of the second conductive patterns, and wherein each of the plurality of first conductive patterns has a first electrical connection portion to be in contact with at least one of the second conductive patterns, and wherein the first conductive pattern includes a first partial pattern that includes the first electrical connection portion and extends in a first direction, and the second conductive pattern includes a second partial pattern that includes the second electrical connection portion and extends in a second direction different from the first direction, and wherein the second partial pattern has a length extending in the second direction longer than a length thereof in the first direction. ### Claim 13 (depends on 12) The solid-state imaging apparatus according to claim 12, further comprising: a plurality of pixels, each pixel including the photoelectric conversion unit, a floating diffusion, and a transfer unit configured to transfer a signal from the photoelectric conversion unit to the floating diffusion, wherein a plurality of sets of the photoelectric conversion unit, the floating diffusion, and the transfer unit are arranged on the first substrate at a predetermined pixel pitch, and wherein the second partial pattern has a length parallel to the second direction shorter than the pixel pitch. ### Claim 14 (depends on 12) The solid-state imaging apparatus according to claim 12, wherein the first direction perpendicularly intersects the second direction. ### Claim 15 (depends on 12) The solid-state imaging apparatus according to claim 12, further comprising: a plurality of pixels, each pixel including the photoelectric conversion unit, a floating diffusion, a transfer unit configured to transfer a signal from the photoelectric conversion unit to the floating diffusion, a pixel amplification unit electrically connected to the floating diffusion at a gate thereof, and a pixel reset unit configured to reset an electric potential at an input node of the pixel amplification unit, wherein a plurality of the photoelectric conversion units, a plurality of the floating diffusions, and a plurality of the transfer units are arranged on the first substrate, and a plurality of the pixel amplification units and a plurality of the pixel reset units are arranged on the second substrate, and wherein the plurality of first conductive patterns is electrically connected to the plurality of floating diffusions respectively, and the plurality of second conductive patterns is electrically connected to the plurality of gates of the pixel amplification units respectively. ### Claim 16 (depends on 15) The solid-state imaging apparatus according to claim 15, wherein at least part of the plurality of first conductive patterns and the plurality of second conductive patterns is arranged to extend to a part of a region in which the photoelectric conversion unit is vertically projected in a direction to the second substrate. ### Claim 17 (depends on 15) The solid-state imaging apparatus according to claim 15, wherein the plurality of the floating diffusions, the plurality of the transfer units configured to transfer a signal from each of the photoelectric conversion units to the floating diffusions, and a plurality of transfer control lines configured to control conduction of the transfer units are arranged on the first substrate, and a vertical scan unit configured to supply drive pulses to the plurality of transfer control lines is arranged on the second substrate, wherein the plurality of first conductive patterns is electrically connected to the plurality of transfer control line respectively, and wherein each of the plurality of second conductive patterns is electrically connected to the vertical scan unit. ### Claim 18 (depends on 12) The solid-state imaging apparatus according to claim 12, wherein the first conductive patterns each have a plurality of the first electrical connection portions, and wherein the second conductive pattern each have a plurality of the second electrical connection portions. ### Claim 19 (depends on 12) The solid-state imaging apparatus according to claim 12, wherein at least the plurality of first conductive patterns or the plurality of second conductive patterns are formed by a plurality of wiring layers. ### Claim 20 (depends on 12) The solid-state imaging apparatus according to claim 12, wherein each of the first conductive patterns further includes a third partial pattern extending in the second direction, wherein each of the second conductive patterns further includes a fourth partial pattern extending in the first direction, wherein the third partial pattern includes a third electrical connection portion to be in contact with the fourth partial pattern, and wherein the fourth partial pattern further includes a fourth electrical connection portion to be in contact with the third partial pattern. ### Claim 21 (depends on 12) The solid-state imaging apparatus according to claim 12, wherein at least the plurality of first conductive patterns or the plurality of second conductive patterns has a damascene structure.