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US 9,000,064 B2Granted
Composition for forming pattern and in-plane printing method using the same
AssigneeLG Display Co., Ltd.
InventorJin-Wuk Kim
Life of this patent
Estimating the term…
Abstract
A composition for forming a pattern includes: about 1% to about 10% by weight of a liquid prepolymer, about 40% to about 60% by weight of an acrylate having a hydrophilic group, about 10% to about 20% by weight of a viscosity modifier, about 1% to about 5% by weight of a photoinitiator, and an additive.
Claims4
An in-plane printing method using a patterning composition, comprising:
- forming a thin film on a substrate;
- forming a resist layer of the patterning composition on the thin film, wherein the patterning composition consists essentially of:
- 1% to 10% by weight of a liquid prepolymer, wherein the liquid prepolymer includes one of octafluoropentyl acrylate and octafluoropentyl methacrylate;
- 40% to 60% by weight of an acrylate having a hydrophilic group, wherein the acrylate having the hydrophilic group includes one of diethylene glycol diacrylate and diethylene glycol dimethacrylate;
- 10% to 20% by weight of a viscosity modifier, wherein the viscosity modifier includes one of butyl acrylate and butyl methacrylate;
- 1% to 5% by weight of a photoinitiator;
- 10% to 20% by weight of a photoreactor, wherein the photoreactor includes one of glycidyl acrylate and glycidyl methacrylate;
- 10% to 20% by weight of a thermal flow derivative, wherein the thermal flow derivative includes one of polystyrene, polymethyl acrylate and polymethyl methacrylate;
- and
- an additive,
- wherein the patterning composition is curable by a UV light;
- disposing a mold over the resist layer;
- pressing the mold toward the resist layer and irradiating light onto the resist layer through the mold to form a resist pattern;
- separating the mold from the resist pattern;
- and
- etching the thin film using the resist pattern as an etch mask to form a thin film pattern.
13 more elements
An in-plane printing method using a patterning composition, comprising:
- forming a thin film on a substrate;
- forming a resist layer of the patterning composition on the thin film, wherein the patterning composition consists essentially of:
- 10% to 30% by weight of a liquid prepolymer having a hydrophilic group, wherein the liquid prepolymer having the hydrophilic group includes one of octafluoro-2-hydroxyl-6-trifluoromethylheptylacrylate and octafluoro-2-hydroxyl-6-trifluoromethylheptylmethacrylate;
- 10% to 20% by weight of a viscosity modifier, wherein the viscosity modifier includes one of butyl acrylate and butyl methacrylate;
- 1% to 5% by weight of a photoinitiator;
- 10% to 20% by weight of a photoreactor, wherein the photoreactor includes one of glycidyl acrylate and glycidyl methacrylate;
- 10% to 20% by weight of a thermal flow derivative, wherein the thermal flow derivative includes one of polystyrene, polymethyl acrylate and polymethyl methacrylate;
- and
- an additive,
- wherein the patterning composition is curable by a UV light;
- disposing a mold over the resist layer;
- pressing the mold toward the resist layer and irradiating a light onto the resist layer through the mold to form a resist pattern;
- separating the mold from the resist pattern;
- and
- etching the thin film using the resist pattern as an etch mask to form a thin film pattern.
12 more elements
Dependencies are inferred from the claim text.