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US 8,999,863 B2Granted
Stress liner for stress engineering
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorsJae Gon Lee, Jingze Tian, Shyue Seng Tan, Luona Goh, Wei Lu, Elgin Quek
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Abstract
A stress liner having first and second stress type is provided over a first type and a second type transistor to improve reliability and performance without incurring area penalties or layout deficiencies.
Claims24
A method of fabricating an IC comprising:
- providing a substrate having first and second active regions defined thereon, the first active region comprises a first transistor of a first type and the second active region comprises a second transistor of a second type;
- forming a continuous first stress liner on the substrate covering the first and second transistors, wherein the continuous first stress liner comprises a first stress;
- forming a mask to protect a second portion of the continuous first stress liner in the second active region while leaving a first portion of the continuous first stress liner in the first active region exposed;
- performing a first stress treatment, the first stress treatment is performed selectively on the first portion of the continuous first stress liner, the first treatment transforms the first stress in the first portion to a second stress while the mask protects the second portion of the continuous first stress liner in the second active region from the first stress treatment;
- removing the mask over the second portion of the continuous first stress liner;
- and
- after removing the mask, performing a second stress treatment, the second stress treatment is performed non-selectively on both the first and second portions of the continuous first stress liner, the second treatment transforms the second stress in the first portion of the continuous first stress liner to a third stress.
4 more elements
A method of forming a device comprising:
- providing a substrate having first and second regions;
- depositing a single continuous first stress liner on the substrate, wherein the single continuous first stress liner has equal thickness and same material throughout the entire liner and comprises a first stress;
- and
- forming a mask to protect a second portion of the single continuous first stress liner in the second region while leaving a first portion of the single continuous first stress liner in the first region exposed;
- performing a first stress treatment selectively on the first portion of the single continuous first stress liner over the first region to convert the first stress in the first portion to a second stress;
- removing the mask over the second portion of the single continuous first stress liner;
- and
- performing a second stress treatment non-selectively on both the first and second portions of the single continuous first stress liner, wherein the second treatment converts the second stress in the first portion to a third stress.
5 more elements
A method of forming a device comprising:
- providing a substrate having first and second regions;
- depositing a continuous stress layer on the substrate over the first and second regions, the continuous stress layer comprising a first stress;
- and
- performing first and second stress treatments on the continuous stress layer to transform the first stress of a first portion of the continuous stress layer over the first region to a second stress and the second stress to a third stress, wherein
- one of first and second treatments on the continuous stress layer is selective to the first portion of the continuous stress layer over the first region and not a second portion of the continuous stress layer over the second region, and
- other of the first and second treatments on the continuous stress layer is non-selective to both the first and second regions.
3 more elements
A method of forming a device comprising:
- providing a substrate having a first region;
- forming a continuous first stress layer on the substrate, the continuous first stress layer comprising a first stress, the continuous first stress layer covers the substrate including the first region;
- performing a first stress treatment on the continuous first stress layer to transform the first stress to a second stress, wherein the first treatment comprises a non-etch treatment;
- and
- performing a second stress treatment on the continuous first stress layer with the second stress to transform the second stress to a third stress.
2 more elements
Dependencies are inferred from the claim text.