Manufacturing method of a semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsMakoto Honda, Tomonori Aoyama
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Abstract
According one embodiment, a method for manufacturing a semiconductor device is provided, which includes forming a pair of element isolation insulation films on a semiconductor substrate, forming a gate electrode structure on sides of the gate electrode structure, selectively removing oxide films that are formed on a top surface of the diffusion layer and a top surface of the gate electrode by placing the substrate in a gas atmosphere selected from the group consisting of F, Cl, Br, I, H, O, Ar, or N; and irradiating the semiconductor substrate with microwave radiation. The method also includes depositing a metal film on a top surface of the diffusion layer and a top surface of the gate electrode, and a silicide film is formed by heating the substrate.
Claims17
A manufacturing method of a semiconductor device, comprising:
- forming a pair of element isolation insulation films on a silicon-containing semiconductor substrate;
- forming a gate electrode structure on a surface of the silicon-containing semiconductor substrate, between the pair of element isolation insulating films;
- forming a diffusion layer on sides of the gate electrode structure;
- selectively removing oxide films that are formed on a top surface of the diffusion layer and a top surface of the gate electrode structure by heating the silicon-containing semiconductor substrate and the oxide films to a temperature greater than a temperature of the element isolation films, wherein the heating comprises irradiating the silicon-containing semiconductor substrate with microwave radiation without exciting a gas atmosphere surrounding the silicon-containing semiconductor substrate into a plasma;
- and
- depositing a metal film on a top surface of the diffusion layer and a top surface of the gate electrode structure.
A manufacturing method of a semiconductor device, comprising:
- forming a pair of element isolation insulation films on a silicon-containing semiconductor substrate;
- forming a gate electrode structure on a surface of the silicon-containing semiconductor substrate, between the pair of element isolation insulating films;
- forming a diffusion layer on sides of the gate electrode structure;
- selectively removing oxide films that are formed on a top surface of the diffusion layer and a top surface of the gate electrode structure by placing the silicon-containing semiconductor substrate in a gas atmosphere selected from the group consisting of F, CI, Br, I, H, O, Ar, or N, and irradiating the silicon-containing semiconductor substrate with microwave radiation without exciting the gas atmosphere surrounding the silicon-containing semiconductor substrate into a plasma;
- and
- depositing a metal film on the top surface of the diffusion layer and the top surface of the gate electrode structure.
Dependencies are inferred from the claim text.