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US 8,999,851 B2Granted
Methods for formation of substrate elements
AssigneeOneD Material, Inc.
InventorsFrancisco Leon, Francesco Lemmi, Jeffrey Miller, David Dutton, David P. Stumbo
Life of this patent
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Abstract
The present invention relates to methods of forming substrate elements, including semiconductor elements such as nanowires, transistors and other structures, as well as the elements formed by such methods.
Claims19
A method for forming one or more substrate elements, comprising:
- (a) providing a substrate layer disposed on a support layer;
- (b) disposing one or more masking regions on the substrate layer to cover at least a portion of the substrate layer;
- (c) removing one or more uncovered substrate layer sections;
- (d) completely removing the support layer beneath the substrate layer, thereby forming one or more suspended substrate elements which are suspended as a bridge above the support layer, wherein the suspended substrate elements remain attached to the substrate layer only at one or both ends of the substrate elements and can be processed prior to removal;
- and
- (e) removing the substrate elements.
3 more elements
A method for forming one or more substrate elements, comprising:
- (a) providing a substrate layer disposed on a support layer;
- (b) disposing one or more masking regions on the substrate layer to cover at least a portion of the substrate layer;
- (c) removing one or more uncovered substrate layer sections;
- (d) completely removing the support layer beneath the substrate layer, thereby forming one or more suspended substrate elements which are suspended as a bridge above the support layer, wherein the suspended substrate elements remain attached to the substrate layer only at one or both ends of the substrate elements;
- (e) processing the suspended substrate elements;
- and
- (f) removing the substrate elements.
4 more elements
A nanowire prepared by a method comprising:
- (a) providing a substrate layer disposed on a support layer;
- (b) disposing one or more masking regions on the substrate layer to cover at least a portion of the substrate layer;
- (c) removing one or more uncovered substrate layer sections;
- (d) completely removing the support layer beneath the substrate layer, thereby forming one or more suspended substrate elements which are suspended as a bridge above the support layer, wherein the suspended substrate elements remain attached to the substrate layer only at one or both ends of the substrate elements and can be processed prior to removal;
- and
- (e) removing the substrate elements as nanowires.
3 more elements
A nanowire prepared by a method comprising:
- (a) providing a substrate layer disposed on a support layer;
- (b) disposing one or more masking regions on the substrate layer to cover at least a portion of the substrate layer;
- (c) removing one or more uncovered substrate layer sections;
- (d) removing the masking regions;
- (e) completely removing the support layer beneath the substrate layer, thereby forming one or more suspended substrate elements which are suspended as a bridge above the support layer, wherein the suspended substrate elements remain attached to the substrate layer only at one or both ends of the substrate elements;
- (f) processing the suspended substrate elements;
- and
- (g) removing the substrate elements as nanowires.
5 more elements
A method for forming one or more substrate elements, comprising:
- (a) providing a substrate layer disposed on a support layer;
- (b) disposing one or more masking regions on the substrate layer to cover at least a portion of the substrate layer;
- (c) completely removing one or more uncovered substrate layer sections, thereby forming one or more substrate elements which are suspended as a bridge above the support layer, wherein the suspended substrate elements remain attached to the substrate layer only at one or both ends of the substrate elements;
- (d) processing the substrate elements;
- and
- (e) removing the substrate elements.
3 more elements
Dependencies are inferred from the claim text.