Method for forming fine pattern of semiconductor device using double spacer patterning technology

A method of forming a fine pattern of a semiconductor device, the method comprising:

• forming a second layer over a first layer;
• forming a partition pattern over the second layer;
• forming first spacers over sidewalls of the partition pattern;
• forming a first gap-fill layer filling between the first spacers;
• removing the first spacers;
• etching the second layer using the partition pattern and the first gap-fill layer as an etch mask to form a first pattern;
• forming second spacers over sidewalls of the first pattern;
• forming a second gap-fill layer filling between the second spacers;
• removing the second spacers;
• and
• etching the first layer using the first pattern and the second gap-fill layer as an etch mask to form a second pattern,
• wherein the first layer and the second gap-fill layer are formed of the same material.