a-Si seasoning effect to improve SiN run-to-run uniformity

A method for depositing a nitrogen-containing material on a substrate placed in a processing chamber, comprising:

• seasoning a surface of a chamber component in a processing region of the processing chamber by depositing a silicon nitride seasoning layer over the surface of the chamber component without the substrate being present;
• after seasoning the surface of the chamber component, processing a batch of substrates within the processing chamber using a plasma enhanced CVD (PECVD) technique, comprising:
• depositing a nitrogen-containing material on 1st substrate to Nth substrate by introducing a nitrogen-containing gas and a silicon-containing gas into the processing chamber;
• seasoning the surface of the chamber component in the processing region of the processing chamber by depositing an amorphous silicon seasoning layer over the surface of the chamber component without the substrate being present;
• and
• after seasoning the surface of the chamber component, depositing a nitrogen-containing material on N+1th to N+Nth substrate by introducing a nitrogen-containing gas and a silicon-containing gas into the processing chamber;
• and
• after the last substrate of the batch of substrates is deposited with the nitrogen-containing material, processing seasoning the surface of the chamber component in the processing region of the processing chamber by depositing a silicon nitride seasoning layer over the surface of the chamber component without the substrate being present.

A method for depositing a nitrogen-containing material on a substrate in a processing chamber, comprising:

• performing a first seasoning process to deposit a first seasoning layer comprising silicon nitride over a surface of a chamber component in the processing chamber without the substrate being present;
• after the first seasoning process, processing a first batch of substrates within the processing chamber to deposit a nitrogen-containing material layer on a substrate from the first batch of substrates;
• after a desired number of substrates have been deposited with the nitrogen-containing material layer, performing a second seasoning process to deposit a second seasoning layer comprising amorphous silicon over the surface of the chamber component in the processing chamber without the substrate being present;
• after the second seasoning process, processing a second batch of substrates within the processing chamber to deposit a nitrogen-containing material layer on a substrate from the second batch of the substrates and after the deposition of the nitrogen-containing material layer on the substrate from the second batch of substrates, performing a third seasoning process to deposit a silicon nitride seasoning layer over the surface of the chamber component in the processing chamber without the substrate being present.

A method for depositing a nitrogen-containing material on a substrate placed in a processing chamber, comprising:

• performing a first chamber seasoning process by depositing a silicon nitride seasoning layer over a surface of a chamber component in a processing region of the processing chamber without the substrate being present;
• after the first chamber seasoning process, processing a batch of substrates within the processing chamber, comprising:
• depositing a nitrogen-containing material layer on 1st substrate to Nth substrate;
• performing a second chamber seasoning process by depositing a conductive seasoning layer over the surface of the chamber component without the substrate being present;
• and
• after the second chamber seasoning process, depositing a nitrogen-containing material layer on N+1th to N+Nth substrate;
• and
• after the last substrate of the batch of substrates is done with the nitrogen-containing material layer and has been removed from the processing chamber, performing a third chamber seasoning process without the substrate being present to deposit a silicon nitride seasoning layer over the surface of the chamber component in the processing chamber.