Interconnect structure for semiconductor devices
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHui-Lin Chang, Hung Chun Tsai, Yung-Cheng Lu, Syun-Ming Jang
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Abstract
A method of manufacturing a semiconductor device with a cap layer for a copper interconnect structure formed in a dielectric layer is provided. In an embodiment, a conductive material is embedded within a dielectric layer, the conductive material comprising a first material and having either a recess, a convex surface, or is planar. The conductive material is silicided to form an alloy layer. The alloy layer comprises the first material and a second material of germanium, arsenic, tungsten, or gallium.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- forming an opening in a substrate, the substrate having a first top surface;
- filling the opening with a conductive material;
- and
- introducing silicon to the conductive material to form a silicide alloy layer overlying the conductive material, wherein after the introducing silicon the conductive material comprises a first material and has a second top surface, the second top surface being planar with the first top surface, the silicide alloy layer having a third top surface that is planar, the silicide alloy layer comprising the first material and a second material, the second material comprising germanium, arsenic, tungsten, or gallium, wherein the introducing silicon to the conductive material further comprises:
- introducing a first precursor to the conductive material, the first precursor being a silicon containing precursor;
- and
- introducing a second precursor to the conductive material.
A method of manufacturing a semiconductor device, the method comprising:
- removing a portion of a dielectric layer to form an opening;
- placing a conductive material into the opening, the conductive material having a convex surface that extends beyond a top surface of the dielectric layer, the conductive material comprising a first material;
- and
- introducing a first precursor and introducing a second precursor to silicide a portion of the conductive material to form an alloy layer conformally to the convex surface, the alloy layer comprising the first material and a second material, the second material comprising germanium, arsenic, tungsten, or gallium, wherein the first precursor is a silicon containing precursor material and the second precursor contains the second material.
A method of manufacturing a semiconductor device, the method comprising:
- embedding a conductive material into an opening within a dielectric material, the conductive material comprising a first material;
- and
- siliciding the conductive material to form an alloy layer over the conductive material, the alloy layer being planar and comprising the first material and a second material, the second material comprising germanium, arsenic, tungsten, or gallium, wherein the siliciding the conductive material further comprises:
- introducing a first precursor material to the conductive material, the first precursor material being a silicon containing precursor material;
- and
- introducing a second precursor material to the conductive material, the second precursor material containing the second material.
Dependencies are inferred from the claim text.