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AssigneeTokyo Electron Limited
InventorsTadahiro Ishizaka, Atsushi Gomi, Kenzi Suzuki, Tatsuo Hatano, Yasushi Mizusawa
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A semiconductor device manufacturing method includes: modifying a surface of a burying recess, of which surface is hydrophobic and which is formed in a dielectric film, to a hydrophilic state by supplying a plasma containing H ions and H radicals or a plasma containing NHx (x being 1, 2 or 3) ions and NHx radicals to the dielectric film formed on a substrate and containing silicon, carbon, hydrogen and oxygen, a bottom portion of the burying recess being exposed with a lower conductive layer; and directly forming an adhesion film formed of a Ru film on the hydrophilic surface of the recess. The method further includes burying copper forming a conductive path in the recess.
A semiconductor device manufacturing method comprising:
Dependencies are inferred from the claim text.