Method of forming fine patterns of semiconductor device

A method of forming a micro pattern of a semiconductor device, the method comprising:

• forming an acid-extinguisher containing film on a substrate including a portion to be etched;
• forming a photoresist film on the acid-extinguisher containing film;
• exposing a portion of the photoresist film to light;
• forming an insoluble polymer thin film in the exposed portion of the photoresist film, the insoluble polymer thin film being in contact with the acid-extinguisher containing film;
• forming a photoresist pattern integrally connected to the insoluble polymer thin film by developing the photoresist film;
• exposing the acid-extinguisher containing film by etching the insoluble polymer thin film using the photoresist pattern as an etching mask;
• exposing the portion of the substrate to be etched by etching the acid-extinguisher containing film using the photoresist pattern as an etching mask;
• and
• etching the portion of the substrate to be etched using the photoresist pattern as an etching mask.

A method comprising:

• forming a photoresist film on a lower film;
• exposing a portion of the photoresist film to light;
• forming an upper film in the exposed portion of the photoresist film such that the upper film is in contact with the lower film, the upper film being insoluble in an alkaline aqueous solution;
• forming a photoresist pattern integrally connected to the upper film by developing the photoresist film;
• and
• exposing the lower film by removing the upper film using the photoresist pattern as an etching mask.