Method for manufacturing display device

A method for manufacturing a display device, comprising the steps of:

• forming a first insulating layer comprising a resin;
• forming a second insulating layer comprising a silicon nitride oxide film over and in contact with the first insulating layer;
• forming a titanium nitride film over and in contact with the second insulating layer;
• forming a reflective electrode layer over and in contact with the titanium nitride film;
• forming an indium zinc oxide film containing tungsten oxide over the reflective electrode layer by a sputtering method using a gas containing argon, oxygen, and H2O;
• forming a first electrode layer by processing the indium zinc oxide film containing tungsten oxide;
• forming an electroluminescent layer over the first electrode layer so that an entirety of a portion of the electroluminescent layer overlaps the reflective electrode layer, wherein the portion of the electroluminescent layer is in contact with the first electrode layer;
• and
• forming a second electrode layer over the electroluminescent layer,
• wherein in a cross section, outermost side end portions of the second insulating layer, the titanium nitride film, and the reflective electrode layer are aligned with one another.

A method for manufacturing a display device, comprising the steps of:

• forming a first insulating layer including a resin;
• forming a second insulating layer including a silicon nitride oxide film over and in contact with the first insulating layer;
• forming a titanium nitride film over and in contact with the second insulating layer;
• forming a reflective electrode layer over and in contact with the titanium nitride film;
• forming an indium zinc oxide film containing silicon oxide and tungsten oxide over the reflective electrode layer by a sputtering method using a gas containing argon, oxygen, and H2O;
• forming a first electrode layer by processing the indium zinc oxide film containing silicon oxide and tungsten oxide;
• forming an electroluminescent layer over the first electrode layer so that an entirety of a portion of the electroluminescent layer overlaps the reflective electrode layer, wherein the portion of the electroluminescent layer is in contact with the first electrode layer;
• and
• forming a second electrode layer over the electroluminescent layer,
• wherein in a cross section, outermost side end portions of the second insulating layer, the titanium nitride film, and the reflective electrode layer are aligned with one another.

A method for manufacturing a display device, comprising the steps of:

• forming a thin film transistor over a substrate;
• forming a first insulating layer including a resin over the thin film transistor;
• forming a second insulating layer including a silicon nitride oxide film over and in contact with the first insulating layer;
• forming a titanium nitride film over and in contact with the second insulating layer;
• forming a reflective electrode layer over and in contact with the titanium nitride film, wherein the reflective electrode layer is electrically connected to a source region or a drain region of the thin film transistor;
• forming an indium zinc oxide film containing silicon oxide and tungsten oxide over the reflective electrode layer by a sputtering method using a gas containing argon, oxygen, and H2O;
• forming a first electrode layer by processing the indium zinc oxide film containing silicon oxide and tungsten oxide;
• forming an electroluminescent layer over the first electrode layer so that an entirety of a portion of the electroluminescent layer overlaps the reflective electrode layer, wherein the portion of the electroluminescent layer is in contact with the first electrode layer;
• and
• forming a second electrode layer over the electroluminescent layer,
• wherein in a cross section, outermost side end portions of the second insulating layer, the titanium nitride film, and the reflective electrode layer are aligned with one another.

A method for manufacturing a display device, comprising the steps of:

• forming a first insulating layer including a resin;
• forming a second insulating layer including a silicon nitride oxide film over and in contact with the first insulating layer;
• forming a titanium nitride film over and in contact with the second insulating layer;
• forming a reflective electrode layer over and in contact with the titanium nitride film;
• forming a first electrode layer over the reflective electrode layer;
• forming an electroluminescent layer over the first electrode layer so that an entirety of a portion of the electroluminescent layer overlaps the reflective electrode layer, wherein the portion of the electroluminescent layer is in contact with the first electrode layer;
• forming an indium zinc oxide film containing tungsten oxide over the electroluminescent layer by a sputtering method using a gas containing argon, oxygen, and H2O;
• and
• forming a second electrode layer by processing the indium zinc oxide film containing tungsten oxide,
• wherein in a cross section, outermost side end portions of the second insulating layer, the titanium nitride film, and the reflective electrode layer are aligned with one another.

A method for manufacturing a display device, comprising the steps of:

• forming a first insulating layer including a resin;
• forming a second insulating layer including a silicon nitride oxide film over and in contact with the first insulating layer;
• forming a titanium nitride film over and in contact with the second insulating layer;
• forming a reflective electrode layer over and in contact with the titanium nitride film;
• forming a first electrode layer over the reflective electrode layer;
• forming an electroluminescent layer over the first electrode layer so that an entirety of a portion of the electroluminescent layer overlaps the reflective electrode layer, wherein the portion of the electroluminescent layer is in contact with the first electrode layer;
• forming an indium zinc oxide film containing silicon oxide and tungsten oxide over the electroluminescent layer by a sputtering method using a gas containing argon, oxygen, and H2O;
• and
• forming a second electrode layer by processing the indium zinc oxide film containing silicon oxide and tungsten oxide,
• wherein in a cross section, outermost side end portions of the second insulating layer, the titanium nitride film, and the reflective electrode layer are aligned with one another.